id	sid	tid	token	lemma	pos
iajs-820	1	1	ibn	ibn	PROPN
iajs-820	1	2	alhaitham	alhaitham	NOUN
iajs-820	1	3	j.	j.	PROPN
iajs-820	1	4	for	for	ADP
iajs-820	1	5	pure	pure	ADJ
iajs-820	1	6	&	&	CCONJ
iajs-820	1	7	appl	appl	PROPN
iajs-820	1	8	.	.	PUNCT
iajs-820	2	1	sci	sci	PROPN
iajs-820	2	2	.	.	PUNCT
iajs-820	2	3	vol.24	vol.24	NOUN
iajs-820	2	4	(	(	PUNCT
iajs-820	2	5	1	1	NUM
iajs-820	2	6	)	)	PUNCT
iajs-820	2	7	2011	2011	NUM
iajs-820	2	8	structural	structural	ADJ
iajs-820	2	9	and	and	CCONJ
iajs-820	2	10	electrical	electrical	ADJ
iajs-820	2	11	properties	property	NOUN
iajs-820	2	12	dependence	dependence	VERB
iajs-820	2	13	on	on	ADP
iajs-820	2	14	annealing	anneal	VERB
iajs-820	2	15	temperature	temperature	NOUN
iajs-820	2	16	of	of	ADP
iajs-820	2	17	a	a	DET
iajs-820	2	18	-	-	PUNCT
iajs-820	2	19	ge	ge	NOUN
iajs-820	2	20	:	:	PUNCT
iajs-820	2	21	sb	sb	PROPN
iajs-820	2	22	/	/	SYM
iajs-820	2	23	c	c	PROPN
iajs-820	2	24	-	-	PUNCT
iajs-820	2	25	si	si	NOUN
iajs-820	2	26	heterojunction	heterojunction	NOUN
iajs-820	2	27	a.	a.	NOUN
iajs-820	2	28	a.shehab	a.shehab	PROPN
iajs-820	2	29	,	,	PUNCT
iajs-820	2	30	h.	h.	PROPN
iajs-820	2	31	kh.al	kh.al	PROPN
iajs-820	2	32	-	-	PUNCT
iajs-820	2	33	lamy	lamy	NOUN
iajs-820	2	34	*	*	NOUN
iajs-820	2	35	,	,	PUNCT
iajs-820	2	36	and	and	CCONJ
iajs-820	2	37	m.	m.	PROPN
iajs-820	2	38	h.mustafa	h.mustafa	PROPN
iajs-820	2	39	department	department	PROPN
iajs-820	2	40	of	of	ADP
iajs-820	2	41	physics	physics	PROPN
iajs-820	2	42	,	,	PUNCT
iajs-820	2	43	college	college	NOUN
iajs-820	2	44	of	of	ADP
iajs-820	2	45	education	education	PROPN
iajs-820	2	46	ibn	ibn	PROPN
iajs-820	2	47	al	al	PROPN
iajs-820	2	48	hathaim	hathaim	PROPN
iajs-820	2	49	,	,	PUNCT
iajs-820	2	50	university	university	NOUN
iajs-820	2	51	of	of	ADP
iajs-820	2	52	baghdad	baghdad	PROPN
iajs-820	2	53	*	*	PUNCT
iajs-820	2	54	department	department	PROPN
iajs-820	2	55	of	of	ADP
iajs-820	2	56	physics	physics	PROPN
iajs-820	2	57	,	,	PUNCT
iajs-820	2	58	college	college	NOUN
iajs-820	2	59	of	of	ADP
iajs-820	2	60	science	science	NOUN
iajs-820	2	61	,	,	PUNCT
iajs-820	2	62	university	university	PROPN
iajs-820	2	63	of	of	ADP
iajs-820	2	64	baghdad	baghdad	PROPN
iajs-820	2	65	received	receive	VERB
iajs-820	2	66	in	in	ADP
iajs-820	2	67	june	june	PROPN
iajs-820	2	68	9	9	NUM
iajs-820	2	69	2010	2010	NUM
iajs-820	2	70	accepted	accept	VERB
iajs-820	2	71	in	in	ADP
iajs-820	2	72	june	june	PROPN
iajs-820	2	73	30	30	NUM
iajs-820	2	74	2010	2010	NUM
iajs-820	2	75	abstract	abstract	NOUN
iajs-820	2	76	in	in	ADP
iajs-820	2	77	this	this	DET
iajs-820	2	78	work	work	NOUN
iajs-820	2	79	,	,	PUNCT
iajs-820	2	80	we	we	PRON
iajs-820	2	81	are	be	AUX
iajs-820	2	82	study	study	VERB
iajs-820	2	83	the	the	DET
iajs-820	2	84	effect	effect	NOUN
iajs-820	2	85	of	of	ADP
iajs-820	2	86	annealing	anneal	VERB
iajs-820	2	87	temperature	temperature	NOUN
iajs-820	2	88	on	on	ADP
iajs-820	2	89	the	the	DET
iajs-820	2	90	structure	structure	NOUN
iajs-820	2	91	of	of	ADP
iajs-820	2	92	a	a	PRON
iajs-820	2	93	-	-	PUNCT
iajs-820	2	94	ge	ge	PROPN
iajs-820	2	95	films	film	NOUN
iajs-820	2	96	doped	dope	VERB
iajs-820	2	97	with	with	ADP
iajs-820	2	98	sb	sb	PROPN
iajs-820	2	99	and	and	CCONJ
iajs-820	2	100	the	the	DET
iajs-820	2	101	electrical	electrical	ADJ
iajs-820	2	102	properties	property	NOUN
iajs-820	2	103	of	of	ADP
iajs-820	2	104	a	a	DET
iajs-820	2	105	-	-	PUNCT
iajs-820	2	106	ge	ge	NOUN
iajs-820	2	107	:	:	PUNCT
iajs-820	2	108	sb	sb	PROPN
iajs-820	2	109	/	/	SYM
iajs-820	2	110	c	c	AUX
iajs-820	2	111	-	-	PUNCT
iajs-820	2	112	si	si	NOUN
iajs-820	2	113	heterojunction	heterojunction	NOUN
iajs-820	2	114	fabricated	fabricate	VERB
iajs-820	2	115	by	by	ADP
iajs-820	2	116	deposition	deposition	NOUN
iajs-820	2	117	of	of	ADP
iajs-820	2	118	a	a	DET
iajs-820	2	119	-	-	PUNCT
iajs-820	2	120	ge	ge	NOUN
iajs-820	2	121	:	:	PUNCT
iajs-820	2	122	sb	sb	NOUN
iajs-820	2	123	film	film	NOUN
iajs-820	2	124	on	on	ADP
iajs-820	2	125	c	c	NOUN
iajs-820	2	126	-	-	PUNCT
iajs-820	2	127	si	si	X
iajs-820	2	128	by	by	ADP
iajs-820	2	129	using	use	VERB
iajs-820	2	130	thermal	thermal	ADJ
iajs-820	2	131	evaporation	evaporation	NOUN
iajs-820	2	132	.	.	PUNCT
iajs-820	3	1	electrical	electrical	ADJ
iajs-820	3	2	properties	property	NOUN
iajs-820	3	3	of	of	ADP
iajs-820	3	4	age	age	NOUN
iajs-820	3	5	:	:	PUNCT
iajs-820	3	6	sb	sb	NOUN
iajs-820	3	7	/	/	SYM
iajs-820	3	8	c	c	PROPN
iajs-820	3	9	-	-	PUNCT
iajs-820	3	10	si	si	NOUN
iajs-820	3	11	heterojunction	heterojunction	NOUN
iajs-820	3	12	include	include	VERB
iajs-820	3	13	i	i	PROPN
iajs-820	3	14	-	-	PUNCT
iajs-820	3	15	v	v	PROPN
iajs-820	3	16	characteristics	characteristic	NOUN
iajs-820	3	17	in	in	ADP
iajs-820	3	18	dark	dark	ADJ
iajs-820	3	19	at	at	ADP
iajs-820	3	20	different	different	ADJ
iajs-820	3	21	annealing	anneal	VERB
iajs-820	3	22	temperatures	temperature	NOUN
iajs-820	3	23	and	and	CCONJ
iajs-820	3	24	c	c	NOUN
iajs-820	3	25	-	-	PUNCT
iajs-820	3	26	v	v	NOUN
iajs-820	3	27	characteristics	characteristic	NOUN
iajs-820	3	28	and	and	CCONJ
iajs-820	3	29	with	with	ADP
iajs-820	3	30	the	the	DET
iajs-820	3	31	c	c	NOUN
iajs-820	3	32	-	-	PUNCT
iajs-820	3	33	v	v	NOUN
iajs-820	3	34	characteristics	characteristic	NOUN
iajs-820	3	35	suggest	suggest	VERB
iajs-820	3	36	that	that	SCONJ
iajs-820	3	37	the	the	DET
iajs-820	3	38	fabricated	fabricate	VERB
iajs-820	3	39	heterojunction	heterojunction	NOUN
iajs-820	3	40	was	be	AUX
iajs-820	3	41	abrupt	abrupt	ADJ
iajs-820	3	42	type	type	NOUN
iajs-820	3	43	,	,	PUNCT
iajs-820	3	44	built	build	VERB
iajs-820	3	45	in	in	ADP
iajs-820	3	46	potential	potential	NOUN
iajs-820	3	47	determined	determine	VERB
iajs-820	3	48	by	by	ADP
iajs-820	3	49	extrapolation	extrapolation	NOUN
iajs-820	3	50	from	from	ADP
iajs-820	3	51	1	1	NUM
iajs-820	3	52	/	/	SYM
iajs-820	3	53	c	c	NOUN
iajs-820	3	54	2	2	NUM
iajs-820	3	55	-v	-v	NOUN
iajs-820	3	56	curve	curve	NOUN
iajs-820	3	57	and	and	CCONJ
iajs-820	3	58	show	show	VERB
iajs-820	3	59	that	that	SCONJ
iajs-820	3	60	the	the	DET
iajs-820	3	61	built	build	VERB
iajs-820	3	62	inpotential	inpotential	ADJ
iajs-820	3	63	(	(	PUNCT
iajs-820	3	64	vbi	vbi	NOUN
iajs-820	3	65	)	)	PUNCT
iajs-820	3	66	for	for	ADP
iajs-820	3	67	the	the	DET
iajs-820	3	68	ge	ge	PROPN
iajs-820	3	69	:	:	PUNCT
iajs-820	3	70	sb	sb	PROPN
iajs-820	3	71	/	/	SYM
iajs-820	3	72	si	si	NOUN
iajs-820	3	73	system	system	NOUN
iajs-820	3	74	increases	increase	VERB
iajs-820	3	75	with	with	ADP
iajs-820	3	76	the	the	DET
iajs-820	3	77	increase	increase	NOUN
iajs-820	3	78	of	of	ADP
iajs-820	3	79	annealing	anneal	VERB
iajs-820	3	80	temperatures	temperature	NOUN
iajs-820	3	81	.	.	PUNCT
iajs-820	4	1	introduction	introduction	NOUN
iajs-820	4	2	iv	iv	NUM
iajs-820	4	3	-	-	PUNCT
iajs-820	4	4	vi	vi	NOUN
iajs-820	4	5	semiconductors	semiconductor	NOUN
iajs-820	4	6	are	be	AUX
iajs-820	4	7	commonly	commonly	ADV
iajs-820	4	8	considered	consider	VERB
iajs-820	4	9	to	to	PART
iajs-820	4	10	be	be	AUX
iajs-820	4	11	promising	promise	VERB
iajs-820	4	12	materials	material	NOUN
iajs-820	4	13	for	for	ADP
iajs-820	4	14	optoelectronic	optoelectronic	NOUN
iajs-820	4	15	,	,	PUNCT
iajs-820	4	16	thermoelectric[1	thermoelectric[1	ADP
iajs-820	4	17	]	]	PUNCT
iajs-820	4	18	,	,	PUNCT
iajs-820	4	19	and	and	CCONJ
iajs-820	4	20	other	other	ADJ
iajs-820	4	21	iv	iv	NUM
iajs-820	4	22	-	-	PUNCT
iajs-820	4	23	vi	vi	NOUN
iajs-820	4	24	layers	layer	NOUN
iajs-820	4	25	(	(	PUNCT
iajs-820	4	26	chalcogenides	chalcogenide	NOUN
iajs-820	4	27	)	)	PUNCT
iajs-820	4	28	on	on	ADP
iajs-820	4	29	si	si	PROPN
iajs-820	4	30	substrates	substrate	NOUN
iajs-820	4	31	applications	application	NOUN
iajs-820	4	32	in	in	ADP
iajs-820	4	33	the	the	DET
iajs-820	4	34	(	(	PUNCT
iajs-820	4	35	inexpensive	inexpensive	ADJ
iajs-820	4	36	,	,	PUNCT
iajs-820	4	37	stable	stable	ADJ
iajs-820	4	38	material	material	NOUN
iajs-820	4	39	,	,	PUNCT
iajs-820	4	40	high	high	ADJ
iajs-820	4	41	efficiency	efficiency	NOUN
iajs-820	4	42	photovoltaic	photovoltaic	NOUN
iajs-820	4	43	solar	solar	ADJ
iajs-820	4	44	cell	cell	NOUN
iajs-820	4	45	,	,	PUNCT
iajs-820	4	46	bipolar	bipolar	ADJ
iajs-820	4	47	,	,	PUNCT
iajs-820	4	48	transistors	transistor	NOUN
iajs-820	4	49	,	,	PUNCT
iajs-820	4	50	photo	photo	NOUN
iajs-820	4	51	sensors	sensor	NOUN
iajs-820	4	52	,	,	PUNCT
iajs-820	4	53	integrated	integrated	ADJ
iajs-820	4	54	circuit	circuit	NOUN
iajs-820	4	55	,	,	PUNCT
iajs-820	4	56	infrared	infrared	ADJ
iajs-820	4	57	detectors	detector	NOUN
iajs-820	4	58	,	,	PUNCT
iajs-820	4	59	infrared	infrare	VERB
iajs-820	4	60	light	light	ADJ
iajs-820	4	61	emitting	emit	VERB
iajs-820	4	62	diodes	diode	NOUN
iajs-820	4	63	and	and	CCONJ
iajs-820	4	64	electro	electro	VERB
iajs-820	4	65	photographic)[2,3,4,5	photographic)[2,3,4,5	NOUN
iajs-820	4	66	]	]	PUNCT
iajs-820	4	67	.	.	PUNCT
iajs-820	5	1	there	there	PRON
iajs-820	5	2	has	have	AUX
iajs-820	5	3	been	be	AUX
iajs-820	5	4	a	a	DET
iajs-820	5	5	rapidly	rapidly	ADV
iajs-820	5	6	growing	grow	VERB
iajs-820	5	7	interest	interest	NOUN
iajs-820	5	8	in	in	ADP
iajs-820	5	9	the	the	DET
iajs-820	5	10	physical	physical	ADJ
iajs-820	5	11	properties	property	NOUN
iajs-820	5	12	of	of	ADP
iajs-820	5	13	amorphous	amorphous	ADJ
iajs-820	5	14	semiconductors	semiconductor	NOUN
iajs-820	5	15	such	such	ADJ
iajs-820	5	16	as	as	ADP
iajs-820	5	17	si	si	PROPN
iajs-820	5	18	,	,	PUNCT
iajs-820	5	19	ge	ge	PROPN
iajs-820	5	20	.	.	PUNCT
iajs-820	6	1	one	one	NUM
iajs-820	6	2	reason	reason	NOUN
iajs-820	6	3	for	for	ADP
iajs-820	6	4	this	this	PRON
iajs-820	6	5	is	be	AUX
iajs-820	6	6	the	the	DET
iajs-820	6	7	extensive	extensive	ADJ
iajs-820	6	8	background	background	NOUN
iajs-820	6	9	knowledge	knowledge	NOUN
iajs-820	6	10	and	and	CCONJ
iajs-820	6	11	understanding	understanding	NOUN
iajs-820	6	12	of	of	ADP
iajs-820	6	13	the	the	DET
iajs-820	6	14	crystalline	crystalline	ADJ
iajs-820	6	15	material	material	NOUN
iajs-820	6	16	.	.	PUNCT
iajs-820	7	1	the	the	DET
iajs-820	7	2	other	other	ADJ
iajs-820	7	3	reason	reason	NOUN
iajs-820	7	4	is	be	AUX
iajs-820	7	5	that	that	PRON
iajs-820	7	6	being	be	AUX
iajs-820	7	7	elemental	elemental	ADJ
iajs-820	7	8	;	;	PUNCT
iajs-820	7	9	they	they	PRON
iajs-820	7	10	lack	lack	VERB
iajs-820	7	11	compositional	compositional	ADJ
iajs-820	7	12	disorder	disorder	NOUN
iajs-820	7	13	[	[	X
iajs-820	7	14	6	6	NUM
iajs-820	7	15	]	]	PUNCT
iajs-820	7	16	.	.	PUNCT
iajs-820	8	1	the	the	DET
iajs-820	8	2	preliminary	preliminary	ADJ
iajs-820	8	3	results	result	NOUN
iajs-820	8	4	of	of	ADP
iajs-820	8	5	structural	structural	ADJ
iajs-820	8	6	and	and	CCONJ
iajs-820	8	7	electrical	electrical	ADJ
iajs-820	8	8	properties	property	NOUN
iajs-820	8	9	of	of	ADP
iajs-820	8	10	this	this	DET
iajs-820	8	11	alloy	alloy	NOUN
iajs-820	8	12	film	film	NOUN
iajs-820	8	13	have	have	AUX
iajs-820	8	14	been	be	AUX
iajs-820	8	15	presented	present	VERB
iajs-820	8	16	.	.	PUNCT
iajs-820	9	1	experimental	experimental	ADJ
iajs-820	9	2	work	work	NOUN
iajs-820	9	3	substrates	substrate	NOUN
iajs-820	9	4	of	of	ADP
iajs-820	9	5	p	p	NOUN
iajs-820	9	6	-	-	PUNCT
iajs-820	9	7	type	type	NOUN
iajs-820	9	8	single	single	ADJ
iajs-820	9	9	crystal	crystal	NOUN
iajs-820	9	10	si	si	NOUN
iajs-820	9	11	wafers	wafer	NOUN
iajs-820	9	12	of	of	ADP
iajs-820	9	13	resistivity	resistivity	NOUN
iajs-820	9	14	(	(	PUNCT
iajs-820	9	15	3	3	NUM
iajs-820	9	16	-	-	SYM
iajs-820	9	17	5	5	NUM
iajs-820	9	18	)	)	PUNCT
iajs-820	9	19	ohm	ohm	NOUN
iajs-820	9	20	-	-	PUNCT
iajs-820	9	21	cm	cm	NOUN
iajs-820	9	22	and	and	CCONJ
iajs-820	9	23	orientation(111	orientation(111	PROPN
iajs-820	9	24	)	)	PUNCT
iajs-820	9	25	was	be	AUX
iajs-820	9	26	used	use	VERB
iajs-820	9	27	in	in	ADP
iajs-820	9	28	the	the	DET
iajs-820	9	29	present	present	ADJ
iajs-820	9	30	study	study	NOUN
iajs-820	9	31	.	.	PUNCT
iajs-820	10	1	after	after	ADP
iajs-820	10	2	the	the	DET
iajs-820	10	3	division	division	NOUN
iajs-820	10	4	of	of	ADP
iajs-820	10	5	these	these	DET
iajs-820	10	6	wafers	wafer	NOUN
iajs-820	10	7	into	into	ADP
iajs-820	10	8	small	small	ADJ
iajs-820	10	9	pieces	piece	NOUN
iajs-820	10	10	(	(	PUNCT
iajs-820	10	11	typically	typically	ADV
iajs-820	10	12	0.8	0.8	NUM
iajs-820	10	13	cm	cm	NOUN
iajs-820	10	14	x	x	PUNCT
iajs-820	10	15	0.6	0.6	NUM
iajs-820	10	16	cm	cm	NOUN
iajs-820	10	17	in	in	ADP
iajs-820	10	18	size	size	NOUN
iajs-820	10	19	)	)	PUNCT
iajs-820	10	20	,	,	PUNCT
iajs-820	10	21	si	si	PROPN
iajs-820	10	22	wafer	wafer	NOUN
iajs-820	10	23	was	be	AUX
iajs-820	10	24	immersed	immerse	VERB
iajs-820	10	25	and	and	CCONJ
iajs-820	10	26	stirred	stir	VERB
iajs-820	10	27	in	in	ADP
iajs-820	10	28	a	a	DET
iajs-820	10	29	chemical	chemical	NOUN
iajs-820	10	30	solution	solution	NOUN
iajs-820	10	31	consists	consist	VERB
iajs-820	10	32	of	of	ADP
iajs-820	10	33	3ml	3ml	ADJ
iajs-820	10	34	hno3	hno3	PROPN
iajs-820	10	35	1ml	1ml	PROPN
iajs-820	10	36	h2o	h2o	PROPN
iajs-820	10	37	for	for	ADP
iajs-820	10	38	(	(	PUNCT
iajs-820	10	39	1	1	NUM
iajs-820	10	40	3	3	NUM
iajs-820	10	41	)	)	PUNCT
iajs-820	10	42	minutes	minute	NOUN
iajs-820	10	43	.	.	PUNCT
iajs-820	11	1	were	be	AUX
iajs-820	11	2	cleaned	clean	VERB
iajs-820	11	3	ultrasonically	ultrasonically	ADV
iajs-820	11	4	by	by	ADP
iajs-820	11	5	dipping	dip	VERB
iajs-820	11	6	in	in	ADP
iajs-820	11	7	distilled	distil	VERB
iajs-820	11	8	water	water	NOUN
iajs-820	11	9	,	,	PUNCT
iajs-820	11	10	acetone	acetone	NOUN
iajs-820	11	11	and	and	CCONJ
iajs-820	11	12	isopropyl	isopropyl	NOUN
iajs-820	11	13	alcohol	alcohol	NOUN
iajs-820	11	14	alternately	alternately	ADV
iajs-820	11	15	.	.	PUNCT
iajs-820	12	1	after	after	ADP
iajs-820	12	2	cleaning	clean	VERB
iajs-820	12	3	,	,	PUNCT
iajs-820	12	4	the	the	DET
iajs-820	12	5	samples	sample	NOUN
iajs-820	12	6	were	be	AUX
iajs-820	12	7	oxidized	oxidize	VERB
iajs-820	12	8	in	in	ADP
iajs-820	12	9	dry	dry	ADJ
iajs-820	12	10	oxygen	oxygen	NOUN
iajs-820	13	1	[	[	X
iajs-820	13	2	7	7	NUM
iajs-820	13	3	]	]	PUNCT
iajs-820	13	4	.	.	PUNCT
iajs-820	14	1	the	the	DET
iajs-820	14	2	films	film	NOUN
iajs-820	14	3	of	of	ADP
iajs-820	14	4	a	a	DET
iajs-820	14	5	-	-	PUNCT
iajs-820	14	6	ge	ge	NOUN
iajs-820	14	7	:	:	PUNCT
iajs-820	14	8	sb	sb	PROPN
iajs-820	14	9	were	be	AUX
iajs-820	14	10	prepared	prepare	VERB
iajs-820	14	11	by	by	ADP
iajs-820	14	12	thermal	thermal	ADJ
iajs-820	14	13	evaporation	evaporation	NOUN
iajs-820	14	14	in	in	ADP
iajs-820	14	15	vacuum	vacuum	NOUN
iajs-820	14	16	of	of	ADP
iajs-820	14	17	the	the	DET
iajs-820	14	18	order	order	NOUN
iajs-820	14	19	of	of	ADP
iajs-820	14	20	10	10	NUM
iajs-820	14	21	-5	-5	INTJ
iajs-820	14	22	torr	torr	PROPN
iajs-820	14	23	,	,	PUNCT
iajs-820	14	24	the	the	DET
iajs-820	14	25	rate	rate	NOUN
iajs-820	14	26	of	of	ADP
iajs-820	14	27	evaporation	evaporation	NOUN
iajs-820	14	28	was	be	AUX
iajs-820	14	29	equal	equal	ADJ
iajs-820	14	30	to	to	ADP
iajs-820	14	31	9.43a	9.43a	NUM
iajs-820	14	32	/	/	SYM
iajs-820	14	33	sec	sec	PROPN
iajs-820	14	34	,	,	PUNCT
iajs-820	14	35	onto	onto	ADP
iajs-820	14	36	clean	clean	ADJ
iajs-820	14	37	silicon	silicon	NOUN
iajs-820	14	38	mirror	mirror	NOUN
iajs-820	14	39	-	-	PUNCT
iajs-820	14	40	like	like	ADJ
iajs-820	14	41	side	side	NOUN
iajs-820	14	42	substrates	substrate	NOUN
iajs-820	14	43	at	at	ADP
iajs-820	14	44	room	room	NOUN
iajs-820	14	45	temperature	temperature	NOUN
iajs-820	14	46	(	(	PUNCT
iajs-820	14	47	~300k	~300k	NUM
iajs-820	14	48	)	)	PUNCT
iajs-820	14	49	.	.	PUNCT
iajs-820	15	1	the	the	DET
iajs-820	15	2	average	average	ADJ
iajs-820	15	3	thicknesses	thickness	NOUN
iajs-820	15	4	of	of	ADP
iajs-820	15	5	the	the	DET
iajs-820	15	6	deposits	deposit	NOUN
iajs-820	15	7	were	be	AUX
iajs-820	15	8	determined	determine	VERB
iajs-820	15	9	by	by	ADP
iajs-820	15	10	microbalance	microbalance	NOUN
iajs-820	15	11	method	method	NOUN
iajs-820	15	12	.	.	PUNCT
iajs-820	16	1	the	the	DET
iajs-820	16	2	maximum	maximum	ADJ
iajs-820	16	3	error	error	NOUN
iajs-820	16	4	in	in	ADP
iajs-820	16	5	the	the	DET
iajs-820	16	6	determination	determination	NOUN
iajs-820	16	7	of	of	ADP
iajs-820	16	8	thickness	thickness	NOUN
iajs-820	16	9	was	be	AUX
iajs-820	16	10	of	of	ADP
iajs-820	16	11	the	the	DET
iajs-820	16	12	order	order	NOUN
iajs-820	16	13	of	of	ADP
iajs-820	16	14	10	10	NUM
iajs-820	16	15	%	%	NOUN
iajs-820	16	16	estimated	estimate	VERB
iajs-820	16	17	for	for	ADP
iajs-820	16	18	the	the	DET
iajs-820	16	19	thinnest	thin	ADJ
iajs-820	16	20	films	film	NOUN
iajs-820	16	21	(	(	PUNCT
iajs-820	16	22	ge	ge	PROPN
iajs-820	16	23	:	:	PUNCT
iajs-820	16	24	sb	sb	PROPN
iajs-820	16	25	/	/	SYM
iajs-820	16	26	si	si	PROPN
iajs-820	16	27	films	film	NOUN
iajs-820	16	28	of	of	ADP
iajs-820	16	29	thickness	thickness	NOUN
iajs-820	16	30	equals	equal	VERB
iajs-820	16	31	to	to	ADP
iajs-820	16	32	0.5	0.5	NUM
iajs-820	16	33	μm).ohmic	μm).ohmic	ADJ
iajs-820	16	34	contacts	contact	NOUN
iajs-820	16	35	of	of	ADP
iajs-820	16	36	the	the	DET
iajs-820	16	37	electrical	electrical	ADJ
iajs-820	16	38	ibn	ibn	PROPN
iajs-820	16	39	alhaitham	alhaitham	NOUN
iajs-820	16	40	j.	j.	PROPN
iajs-820	16	41	for	for	ADP
iajs-820	16	42	pure	pure	ADJ
iajs-820	16	43	&	&	CCONJ
iajs-820	16	44	appl	appl	PROPN
iajs-820	16	45	.	.	PUNCT
iajs-820	17	1	sci	sci	PROPN
iajs-820	17	2	.	.	PUNCT
iajs-820	17	3	vol.24	vol.24	NOUN
iajs-820	17	4	(	(	PUNCT
iajs-820	17	5	1	1	NUM
iajs-820	17	6	)	)	PUNCT
iajs-820	17	7	2011	2011	NUM
iajs-820	17	8	properties	property	NOUN
iajs-820	17	9	of	of	ADP
iajs-820	17	10	ge	ge	PROPN
iajs-820	17	11	:	:	PUNCT
iajs-820	17	12	sb	sb	PROPN
iajs-820	17	13	/	/	SYM
iajs-820	17	14	si	si	PROPN
iajs-820	17	15	heterojunction	heterojunction	NOUN
iajs-820	17	16	,	,	PUNCT
iajs-820	17	17	aluminum	aluminum	NOUN
iajs-820	18	1	[	[	X
iajs-820	18	2	8	8	NUM
iajs-820	18	3	]	]	PUNCT
iajs-820	18	4	were	be	AUX
iajs-820	18	5	evaporated	evaporate	VERB
iajs-820	18	6	on	on	ADP
iajs-820	18	7	the	the	DET
iajs-820	18	8	silicon	silicon	NOUN
iajs-820	18	9	side	side	NOUN
iajs-820	18	10	and	and	CCONJ
iajs-820	18	11	ge	ge	PROPN
iajs-820	18	12	:	:	PUNCT
iajs-820	18	13	sb	sb	PROPN
iajs-820	18	14	/si	/si	PROPN
iajs-820	18	15	side	side	NOUN
iajs-820	18	16	.	.	PUNCT
iajs-820	19	1	theoretical	theoretical	ADJ
iajs-820	19	2	part	part	NOUN
iajs-820	19	3	heterojunction	heterojunction	NOUN
iajs-820	19	4	is	be	AUX
iajs-820	19	5	contacts	contact	NOUN
iajs-820	19	6	,	,	PUNCT
iajs-820	19	7	with	with	ADP
iajs-820	19	8	interesting	interesting	ADJ
iajs-820	19	9	electrical	electrical	ADJ
iajs-820	19	10	or	or	CCONJ
iajs-820	19	11	electrooptical	electrooptical	ADJ
iajs-820	19	12	properties	property	NOUN
iajs-820	19	13	,	,	PUNCT
iajs-820	19	14	between	between	ADP
iajs-820	19	15	two	two	NUM
iajs-820	19	16	different	different	ADJ
iajs-820	19	17	materials	material	NOUN
iajs-820	19	18	.they	.they	PRON
iajs-820	19	19	will	will	AUX
iajs-820	19	20	therefore	therefore	ADV
iajs-820	19	21	be	be	AUX
iajs-820	19	22	the	the	DET
iajs-820	19	23	sites	site	NOUN
iajs-820	19	24	,	,	PUNCT
iajs-820	19	25	in	in	ADP
iajs-820	19	26	general	general	ADJ
iajs-820	19	27	,	,	PUNCT
iajs-820	19	28	of	of	ADP
iajs-820	19	29	discontinuities	discontinuity	NOUN
iajs-820	19	30	in	in	ADP
iajs-820	19	31	all	all	DET
iajs-820	19	32	the	the	DET
iajs-820	19	33	significant	significant	ADJ
iajs-820	19	34	semiconductor	semiconductor	NOUN
iajs-820	19	35	parameters	parameter	NOUN
iajs-820	19	36	:	:	PUNCT
iajs-820	19	37	energy	energy	NOUN
iajs-820	19	38	gap	gap	NOUN
iajs-820	19	39	,	,	PUNCT
iajs-820	19	40	work	work	NOUN
iajs-820	19	41	function	function	NOUN
iajs-820	19	42	,	,	PUNCT
iajs-820	19	43	lattice	lattice	NOUN
iajs-820	19	44	parameter	parameter	NOUN
iajs-820	19	45	,	,	PUNCT
iajs-820	19	46	and	and	CCONJ
iajs-820	19	47	effective	effective	ADJ
iajs-820	19	48	mass[9	mass[9	NOUN
iajs-820	19	49	]	]	PUNCT
iajs-820	19	50	.	.	PUNCT
iajs-820	20	1	the	the	DET
iajs-820	20	2	expression	expression	NOUN
iajs-820	20	3	for	for	ADP
iajs-820	20	4	the	the	DET
iajs-820	20	5	junction	junction	NOUN
iajs-820	20	6	capacitance	capacitance	NOUN
iajs-820	20	7	per	per	ADP
iajs-820	20	8	unit	unit	NOUN
iajs-820	20	9	area	area	NOUN
iajs-820	20	10	of	of	ADP
iajs-820	20	11	an	an	DET
iajs-820	20	12	abrupt	abrupt	ADJ
iajs-820	20	13	anisotype	anisotype	NOUN
iajs-820	20	14	heterojunction	heterojunction	NOUN
iajs-820	20	15	can	can	AUX
iajs-820	20	16	be	be	AUX
iajs-820	20	17	written	write	VERB
iajs-820	20	18	as	as	ADP
iajs-820	20	19	[	[	X
iajs-820	20	20	10	10	NUM
iajs-820	20	21	]	]	PUNCT
iajs-820	20	22	.	.	PUNCT
iajs-820	21	1			NOUN
iajs-820	21	2			PROPN
iajs-820	21	3	21	21	NUM
iajs-820	21	4	ad	ad	NOUN
iajs-820	21	5	21	21	NUM
iajs-820	21	6	ppnn	ppnn	NOUN
iajs-820	21	7	pnpn	pnpn	NOUN
iajs-820	21	8	)	)	PUNCT
iajs-820	22	1	vv	vv	PROPN
iajs-820	22	2	(	(	PUNCT
iajs-820	22	3	nn2	nn2	PROPN
iajs-820	22	4	nnq	nnq	PROPN
iajs-820	23	1	a	a	DET
iajs-820	23	2	c	c	NOUN
iajs-820	23	3			PROPN
iajs-820	23	4			NOUN
iajs-820	23	5			PROPN
iajs-820	23	6			PROPN
iajs-820	23	7			X
iajs-820	23	8			NOUN
iajs-820	23	9			X
iajs-820	23	10			VERB
iajs-820	23	11			PROPN
iajs-820	23	12			PROPN
iajs-820	23	13			PROPN
iajs-820	23	14			PRON
iajs-820	23	15	…	…	PUNCT
iajs-820	23	16	…	…	PUNCT
iajs-820	23	17	…	…	PUNCT
iajs-820	23	18	…	…	PUNCT
iajs-820	23	19	…	…	PUNCT
iajs-820	23	20	…	…	PUNCT
iajs-820	23	21	…	…	PUNCT
iajs-820	23	22	…	…	PUNCT
iajs-820	23	23	…	…	PUNCT
iajs-820	23	24	…	…	PUNCT
iajs-820	23	25	…	…	PUNCT
iajs-820	23	26	…	…	PUNCT
iajs-820	23	27	…	…	PUNCT
iajs-820	23	28	…	…	PUNCT
iajs-820	23	29	..	..	PUNCT
iajs-820	23	30	(	(	PUNCT
iajs-820	23	31	1	1	X
iajs-820	23	32	)	)	PUNCT
iajs-820	23	33	where	where	SCONJ
iajs-820	23	34	nn	nn	PROPN
iajs-820	23	35	and	and	CCONJ
iajs-820	23	36	np	np	PROPN
iajs-820	23	37	are	be	AUX
iajs-820	23	38	the	the	DET
iajs-820	23	39	donor	donor	NOUN
iajs-820	23	40	and	and	CCONJ
iajs-820	23	41	acceptor	acceptor	NOUN
iajs-820	23	42	concentrations	concentration	NOUN
iajs-820	23	43	respectively	respectively	ADV
iajs-820	23	44	,	,	PUNCT
iajs-820	23	45	n	n	PROPN
iajs-820	23	46	and	and	CCONJ
iajs-820	23	47	p	p	PROPN
iajs-820	23	48	are	be	AUX
iajs-820	23	49	the	the	DET
iajs-820	23	50	dielectric	dielectric	ADJ
iajs-820	23	51	constant	constant	ADJ
iajs-820	23	52	of	of	ADP
iajs-820	23	53	n	n	PROPN
iajs-820	23	54	and	and	CCONJ
iajs-820	23	55	p	p	ADJ
iajs-820	23	56	-	-	PUNCT
iajs-820	23	57	type	type	NOUN
iajs-820	23	58	semiconductor	semiconductor	NOUN
iajs-820	23	59	respectively	respectively	ADV
iajs-820	23	60	,	,	PUNCT
iajs-820	23	61	vd	vd	NOUN
iajs-820	23	62	is	be	AUX
iajs-820	23	63	the	the	DET
iajs-820	23	64	built	build	VERB
iajs-820	23	65	-	-	PUNCT
iajs-820	23	66	in	in	ADP
iajs-820	23	67	junction	junction	NOUN
iajs-820	23	68	potential	potential	NOUN
iajs-820	23	69	,	,	PUNCT
iajs-820	23	70	v	v	NOUN
iajs-820	23	71	is	be	AUX
iajs-820	23	72	the	the	DET
iajs-820	23	73	applied	apply	VERB
iajs-820	23	74	voltage	voltage	NOUN
iajs-820	23	75	,	,	PUNCT
iajs-820	23	76	and	and	CCONJ
iajs-820	23	77	a	a	PRON
iajs-820	23	78	is	be	AUX
iajs-820	23	79	the	the	DET
iajs-820	23	80	area	area	NOUN
iajs-820	23	81	of	of	ADP
iajs-820	23	82	the	the	DET
iajs-820	23	83	junction	junction	NOUN
iajs-820	23	84	.	.	PUNCT
iajs-820	24	1	from	from	ADP
iajs-820	24	2	plots	plot	NOUN
iajs-820	24	3	of	of	ADP
iajs-820	24	4	the	the	DET
iajs-820	24	5	relation	relation	NOUN
iajs-820	24	6	between	between	ADP
iajs-820	24	7	the	the	DET
iajs-820	24	8	forward	forward	ADV
iajs-820	24	9	current	current	ADJ
iajs-820	24	10	and	and	CCONJ
iajs-820	24	11	bias	bias	NOUN
iajs-820	24	12	voltage	voltage	NOUN
iajs-820	24	13	,	,	PUNCT
iajs-820	24	14	the	the	DET
iajs-820	24	15	ideality	ideality	NOUN
iajs-820	24	16	factor	factor	NOUN
iajs-820	24	17	(	(	PUNCT
iajs-820	24	18	β	β	NOUN
iajs-820	24	19	)	)	PUNCT
iajs-820	24	20	can	can	AUX
iajs-820	24	21	be	be	AUX
iajs-820	24	22	determined	determine	VERB
iajs-820	24	23	by	by	ADP
iajs-820	24	24	the	the	DET
iajs-820	24	25	relation	relation	NOUN
iajs-820	25	1	[	[	X
iajs-820	25	2	11	11	NUM
iajs-820	25	3	]	]	PUNCT
iajs-820	25	4	:	:	PUNCT
iajs-820	25	5			PROPN
iajs-820	25	6			NUM
iajs-820	25	7			PRON
iajs-820	25	8			PROPN
iajs-820	25	9			PROPN
iajs-820	25	10			NOUN
iajs-820	26	1			NUM
iajs-820	26	2	s	s	PART
iajs-820	26	3	fb	fb	INTJ
iajs-820	26	4	i	i	PROPN
iajs-820	26	5	iln	iln	PROPN
iajs-820	26	6	v	v	INTJ
iajs-820	26	7	tk	tk	PROPN
iajs-820	26	8	q	q	PROPN
iajs-820	26	9	...............................................................................................	...............................................................................................	PUNCT
iajs-820	26	10	(	(	PUNCT
iajs-820	26	11	2	2	X
iajs-820	26	12	)	)	PUNCT
iajs-820	26	13	where	where	SCONJ
iajs-820	26	14	v	v	NOUN
iajs-820	26	15	is	be	AUX
iajs-820	26	16	the	the	DET
iajs-820	26	17	forward	forward	ADJ
iajs-820	26	18	bias	bias	NOUN
iajs-820	26	19	voltage	voltage	NOUN
iajs-820	26	20	,	,	PUNCT
iajs-820	26	21	if	if	SCONJ
iajs-820	26	22	is	be	AUX
iajs-820	26	23	the	the	DET
iajs-820	26	24	forward	forward	ADJ
iajs-820	26	25	bias	bias	NOUN
iajs-820	26	26	current	current	ADJ
iajs-820	26	27	,	,	PUNCT
iajs-820	26	28	kb	kb	PROPN
iajs-820	26	29	is	be	AUX
iajs-820	26	30	the	the	DET
iajs-820	26	31	boltzmann	boltzmann	NOUN
iajs-820	26	32	's	's	PART
iajs-820	26	33	constant	constant	ADJ
iajs-820	26	34	,	,	PUNCT
iajs-820	26	35	t	t	PROPN
iajs-820	26	36	is	be	AUX
iajs-820	26	37	the	the	DET
iajs-820	26	38	absolute	absolute	ADJ
iajs-820	26	39	temperature	temperature	NOUN
iajs-820	26	40	,	,	PUNCT
iajs-820	26	41	q	q	PUNCT
iajs-820	26	42	is	be	AUX
iajs-820	26	43	charge	charge	NOUN
iajs-820	26	44	of	of	ADP
iajs-820	26	45	electron	electron	NOUN
iajs-820	26	46	and	and	CCONJ
iajs-820	26	47	is	be	AUX
iajs-820	26	48	saturation	saturation	NOUN
iajs-820	26	49	current	current	ADJ
iajs-820	26	50	.	.	PUNCT
iajs-820	27	1	from	from	ADP
iajs-820	27	2	current	current	ADJ
iajs-820	27	3	-	-	PUNCT
iajs-820	27	4	voltage	voltage	NOUN
iajs-820	27	5	measurements	measurement	NOUN
iajs-820	27	6	we	we	PRON
iajs-820	27	7	can	can	AUX
iajs-820	27	8	determine	determine	VERB
iajs-820	27	9	the	the	DET
iajs-820	27	10	potential	potential	ADJ
iajs-820	27	11	barrier	barrier	NOUN
iajs-820	27	12	height	height	NOUN
iajs-820	27	13	(	(	PUNCT
iajs-820	27	14			PROPN
iajs-820	27	15	b	b	NOUN
iajs-820	27	16	)	)	PUNCT
iajs-820	27	17	which	which	PRON
iajs-820	27	18	can	can	AUX
iajs-820	27	19	be	be	AUX
iajs-820	27	20	determined	determine	VERB
iajs-820	27	21	by	by	ADP
iajs-820	27	22	the	the	DET
iajs-820	27	23	relation	relation	NOUN
iajs-820	27	24	:	:	PUNCT
iajs-820	27	25	js	js	PROPN
iajs-820	27	26	=	=	PUNCT
iajs-820	27	27	a	a	PROPN
iajs-820	27	28	*	*	PUNCT
iajs-820	27	29	t2	t2	PROPN
iajs-820	27	30	exp	exp	NOUN
iajs-820	27	31	(	(	PUNCT
iajs-820	27	32	-qb	-qb	PROPN
iajs-820	27	33	/	/	SYM
iajs-820	27	34	kbt	kbt	PROPN
iajs-820	27	35	)	)	PUNCT
iajs-820	27	36	............................................................................................	............................................................................................	PUNCT
iajs-820	28	1	(	(	PUNCT
iajs-820	28	2	3	3	X
iajs-820	28	3	)	)	PUNCT
iajs-820	28	4	where	where	SCONJ
iajs-820	28	5	a	a	PRON
iajs-820	28	6	*	*	PUNCT
iajs-820	28	7	is	be	AUX
iajs-820	28	8	the	the	DET
iajs-820	28	9	effective	effective	ADJ
iajs-820	28	10	richardson	richardson	PROPN
iajs-820	28	11	constant	constant	PROPN
iajs-820	28	12	.	.	PUNCT
iajs-820	29	1	result	result	NOUN
iajs-820	29	2	and	and	CCONJ
iajs-820	29	3	discussion	discussion	NOUN
iajs-820	29	4	xrd	xrd	VERB
iajs-820	29	5	analysis	analysis	NOUN
iajs-820	29	6	xray	xray	PROPN
iajs-820	29	7	diffraction	diffraction	PROPN
iajs-820	29	8	(	(	PUNCT
iajs-820	29	9	xrd	xrd	NOUN
iajs-820	29	10	)	)	PUNCT
iajs-820	29	11	studies	study	NOUN
iajs-820	29	12	have	have	AUX
iajs-820	29	13	been	be	AUX
iajs-820	29	14	carried	carry	VERB
iajs-820	29	15	out	out	ADP
iajs-820	29	16	to	to	PART
iajs-820	29	17	identify	identify	VERB
iajs-820	29	18	the	the	DET
iajs-820	29	19	ge	ge	PROPN
iajs-820	29	20	phase	phase	NOUN
iajs-820	29	21	present	present	ADJ
iajs-820	29	22	in	in	ADP
iajs-820	29	23	the	the	DET
iajs-820	29	24	film	film	NOUN
iajs-820	29	25	.	.	PUNCT
iajs-820	30	1	fig.1	fig.1	PROPN
iajs-820	30	2	shows	show	VERB
iajs-820	30	3	that	that	SCONJ
iajs-820	30	4	xrd	xrd	NOUN
iajs-820	30	5	pattern	pattern	NOUN
iajs-820	30	6	recorded	record	VERB
iajs-820	30	7	on	on	ADP
iajs-820	30	8	ge	ge	PROPN
iajs-820	30	9	film	film	PROPN
iajs-820	30	10	,	,	PUNCT
iajs-820	30	11	coated	coat	VERB
iajs-820	30	12	on	on	ADP
iajs-820	30	13	slide	slide	NOUN
iajs-820	30	14	glass	glass	NOUN
iajs-820	30	15	substrate	substrate	NOUN
iajs-820	30	16	.	.	PUNCT
iajs-820	31	1	the	the	DET
iajs-820	31	2	structural	structural	NOUN
iajs-820	31	3	of	of	ADP
iajs-820	31	4	film	film	NOUN
iajs-820	31	5	is	be	AUX
iajs-820	31	6	amorphous	amorphous	ADJ
iajs-820	31	7	.	.	PUNCT
iajs-820	32	1	i	i	PRON
iajs-820	32	2	-	-	PUNCT
iajs-820	32	3	v	v	PROPN
iajs-820	32	4	characteristics	characteristic	NOUN
iajs-820	32	5	under	under	ADP
iajs-820	32	6	dark	dark	ADJ
iajs-820	32	7	one	one	NUM
iajs-820	32	8	of	of	ADP
iajs-820	32	9	the	the	DET
iajs-820	32	10	important	important	ADJ
iajs-820	32	11	parameters	parameter	NOUN
iajs-820	32	12	of	of	ADP
iajs-820	32	13	a	a	DET
iajs-820	32	14	heterojunction	heterojunction	NOUN
iajs-820	32	15	measurement	measurement	NOUN
iajs-820	32	16	is	be	AUX
iajs-820	32	17	the	the	DET
iajs-820	32	18	current	current	ADJ
iajs-820	32	19	-	-	PUNCT
iajs-820	32	20	voltage	voltage	NOUN
iajs-820	32	21	characteristic	characteristic	NOUN
iajs-820	32	22	which	which	PRON
iajs-820	32	23	explains	explain	VERB
iajs-820	32	24	the	the	DET
iajs-820	32	25	behavior	behavior	NOUN
iajs-820	32	26	of	of	ADP
iajs-820	32	27	the	the	DET
iajs-820	32	28	resultant	resultant	NOUN
iajs-820	32	29	current	current	NOUN
iajs-820	32	30	with	with	ADP
iajs-820	32	31	the	the	DET
iajs-820	32	32	applied	apply	VERB
iajs-820	32	33	forward	forward	ADV
iajs-820	32	34	and	and	CCONJ
iajs-820	32	35	reverse	reverse	ADJ
iajs-820	32	36	bias	bias	NOUN
iajs-820	32	37	voltage	voltage	NOUN
iajs-820	32	38	.	.	PUNCT
iajs-820	33	1	fig	fig	NOUN
iajs-820	33	2	.	.	PUNCT
iajs-820	34	1	(	(	PUNCT
iajs-820	34	2	2	2	X
iajs-820	34	3	)	)	PUNCT
iajs-820	34	4	shows	show	VERB
iajs-820	34	5	that	that	SCONJ
iajs-820	34	6	i	i	PRON
iajs-820	34	7	-	-	PUNCT
iajs-820	34	8	v	v	PROPN
iajs-820	34	9	characteristic	characteristic	NOUN
iajs-820	34	10	for	for	ADP
iajs-820	34	11	a	a	DET
iajs-820	34	12	-	-	PUNCT
iajs-820	34	13	ge	ge	NOUN
iajs-820	34	14	:	:	PUNCT
iajs-820	34	15	sb	sb	PROPN
iajs-820	34	16	/	/	SYM
iajs-820	34	17	c	c	AUX
iajs-820	34	18	-	-	PUNCT
iajs-820	34	19	si	si	NOUN
iajs-820	34	20	heterojunction	heterojunction	NOUN
iajs-820	34	21	at	at	ADP
iajs-820	34	22	forward	forward	ADV
iajs-820	34	23	and	and	CCONJ
iajs-820	34	24	reverse	reverse	ADJ
iajs-820	34	25	bias	bias	NOUN
iajs-820	34	26	voltage	voltage	NOUN
iajs-820	34	27	at	at	ADP
iajs-820	34	28	r.t	r.t	PROPN
iajs-820	34	29	and	and	CCONJ
iajs-820	34	30	different	different	ADJ
iajs-820	34	31	annealing	anneal	VERB
iajs-820	34	32	temperatures	temperature	NOUN
iajs-820	34	33	(	(	PUNCT
iajs-820	34	34	373,423.473)k	373,423.473)k	NOUN
iajs-820	34	35	.	.	PUNCT
iajs-820	35	1	this	this	DET
iajs-820	35	2	result	result	NOUN
iajs-820	35	3	is	be	AUX
iajs-820	35	4	in	in	ADP
iajs-820	35	5	agreement	agreement	NOUN
iajs-820	35	6	with	with	ADP
iajs-820	35	7	chik	chik	PROPN
iajs-820	35	8	et	et	NOUN
iajs-820	35	9	al[12	al[12	PROPN
iajs-820	35	10	]	]	PUNCT
iajs-820	35	11	when	when	SCONJ
iajs-820	35	12	thickness	thickness	NOUN
iajs-820	35	13	of	of	ADP
iajs-820	35	14	films	film	NOUN
iajs-820	35	15	equals	equal	VERB
iajs-820	35	16	to	to	ADP
iajs-820	35	17	0.5	0.5	NUM
iajs-820	35	18	μm	μm	NOUN
iajs-820	35	19	.	.	PUNCT
iajs-820	36	1	ibn	ibn	PROPN
iajs-820	36	2	alhaitham	alhaitham	PROPN
iajs-820	36	3	j.	j.	PROPN
iajs-820	36	4	for	for	ADP
iajs-820	36	5	pure	pure	ADJ
iajs-820	36	6	&	&	CCONJ
iajs-820	36	7	appl	appl	PROPN
iajs-820	36	8	.	.	PUNCT
iajs-820	37	1	sci	sci	PROPN
iajs-820	37	2	.	.	PUNCT
iajs-820	37	3	vol.24	vol.24	NOUN
iajs-820	37	4	(	(	PUNCT
iajs-820	37	5	1	1	NUM
iajs-820	37	6	)	)	PUNCT
iajs-820	37	7	2011	2011	NUM
iajs-820	37	8	we	we	PRON
iajs-820	37	9	observed	observe	VERB
iajs-820	37	10	that	that	SCONJ
iajs-820	37	11	the	the	DET
iajs-820	37	12	current	current	ADJ
iajs-820	37	13	increases	increase	NOUN
iajs-820	37	14	slightly	slightly	ADV
iajs-820	37	15	with	with	ADP
iajs-820	37	16	the	the	DET
iajs-820	37	17	increase	increase	NOUN
iajs-820	37	18	of	of	ADP
iajs-820	37	19	annealing	anneal	VERB
iajs-820	37	20	temperatures	temperature	NOUN
iajs-820	37	21	because	because	SCONJ
iajs-820	37	22	the	the	DET
iajs-820	37	23	increases	increase	NOUN
iajs-820	37	24	of	of	ADP
iajs-820	37	25	temperatures	temperature	NOUN
iajs-820	37	26	cause	cause	VERB
iajs-820	37	27	a	a	DET
iajs-820	37	28	rearrangement	rearrangement	NOUN
iajs-820	37	29	of	of	ADP
iajs-820	37	30	the	the	DET
iajs-820	37	31	interface	interface	NOUN
iajs-820	37	32	atoms	atom	NOUN
iajs-820	37	33	and	and	CCONJ
iajs-820	37	34	reducethe	reducethe	DET
iajs-820	37	35	dangling	dangle	VERB
iajs-820	37	36	bond	bond	NOUN
iajs-820	37	37	,	,	PUNCT
iajs-820	37	38	surface	surface	NOUN
iajs-820	37	39	states	state	NOUN
iajs-820	37	40	and	and	CCONJ
iajs-820	37	41	dislocation	dislocation	NOUN
iajs-820	37	42	at	at	ADP
iajs-820	37	43	interface	interface	NOUN
iajs-820	37	44	layer	layer	NOUN
iajs-820	37	45	between	between	ADP
iajs-820	37	46	a	a	DET
iajs-820	37	47	-	-	PUNCT
iajs-820	37	48	ge	ge	NOUN
iajs-820	37	49	:	:	PUNCT
iajs-820	37	50	sb	sb	PROPN
iajs-820	37	51	and	and	CCONJ
iajs-820	37	52	c	c	PROPN
iajs-820	37	53	-	-	PUNCT
iajs-820	37	54	si	si	X
iajs-820	37	55	which	which	PRON
iajs-820	37	56	leads	lead	VERB
iajs-820	37	57	to	to	ADP
iajs-820	37	58	the	the	DET
iajs-820	37	59	improvement	improvement	NOUN
iajs-820	37	60	of	of	ADP
iajs-820	37	61	the	the	DET
iajs-820	37	62	junction	junction	NOUN
iajs-820	37	63	characteristics	characteristic	NOUN
iajs-820	37	64	.	.	PUNCT
iajs-820	38	1	also	also	ADV
iajs-820	38	2	,	,	PUNCT
iajs-820	38	3	we	we	PRON
iajs-820	38	4	can	can	AUX
iajs-820	38	5	notice	notice	VERB
iajs-820	38	6	from	from	ADP
iajs-820	38	7	table	table	NOUN
iajs-820	38	8	(	(	PUNCT
iajs-820	38	9	1	1	NUM
iajs-820	38	10	)	)	PUNCT
iajs-820	38	11	that	that	SCONJ
iajs-820	38	12	the	the	DET
iajs-820	38	13	value	value	NOUN
iajs-820	38	14	of	of	ADP
iajs-820	38	15	the	the	DET
iajs-820	38	16	ideality	ideality	NOUN
iajs-820	38	17	factor	factor	NOUN
iajs-820	38	18	and	and	CCONJ
iajs-820	38	19	potential	potential	ADJ
iajs-820	38	20	barrier	barrier	NOUN
iajs-820	38	21	height	height	NOUN
iajs-820	38	22	increases	increase	NOUN
iajs-820	38	23	but	but	CCONJ
iajs-820	38	24	saturation	saturation	NOUN
iajs-820	38	25	current	current	ADJ
iajs-820	38	26	decreases	decrease	VERB
iajs-820	38	27	with	with	ADP
iajs-820	38	28	the	the	DET
iajs-820	38	29	increase	increase	NOUN
iajs-820	38	30	of	of	ADP
iajs-820	38	31	annealing	anneal	VERB
iajs-820	38	32	temperature	temperature	NOUN
iajs-820	38	33	.	.	PUNCT
iajs-820	39	1	this	this	DET
iajs-820	39	2	behavior	behavior	NOUN
iajs-820	39	3	attributed	attribute	VERB
iajs-820	39	4	to	to	ADP
iajs-820	39	5	the	the	DET
iajs-820	39	6	improvement	improvement	NOUN
iajs-820	39	7	of	of	ADP
iajs-820	39	8	crystal	crystal	NOUN
iajs-820	39	9	structure	structure	NOUN
iajs-820	39	10	at	at	ADP
iajs-820	39	11	interface	interface	NOUN
iajs-820	39	12	layer	layer	NOUN
iajs-820	39	13	,	,	PUNCT
iajs-820	39	14	also	also	ADV
iajs-820	39	15	the	the	DET
iajs-820	39	16	reduction	reduction	NOUN
iajs-820	39	17	of	of	ADP
iajs-820	39	18	dangling	dangle	VERB
iajs-820	39	19	bonds	bond	NOUN
iajs-820	39	20	as	as	ADV
iajs-820	39	21	well	well	ADV
iajs-820	39	22	as	as	ADP
iajs-820	39	23	the	the	DET
iajs-820	39	24	density	density	NOUN
iajs-820	39	25	of	of	ADP
iajs-820	39	26	states	state	NOUN
iajs-820	39	27	in	in	ADP
iajs-820	39	28	a	a	DET
iajs-820	39	29	-	-	PUNCT
iajs-820	39	30	ge	ge	NOUN
iajs-820	39	31	:	:	PUNCT
iajs-820	39	32	sb	sb	PROPN
iajs-820	39	33	.	.	PROPN
iajs-820	39	34	c	c	X
iajs-820	39	35	-	-	PUNCT
iajs-820	39	36	v	v	NOUN
iajs-820	39	37	characteristics	characteristic	NOUN
iajs-820	39	38	the	the	DET
iajs-820	39	39	junction	junction	NOUN
iajs-820	39	40	capacitance	capacitance	NOUN
iajs-820	39	41	variations	variation	NOUN
iajs-820	39	42	as	as	ADP
iajs-820	39	43	a	a	DET
iajs-820	39	44	function	function	NOUN
iajs-820	39	45	of	of	ADP
iajs-820	39	46	the	the	DET
iajs-820	39	47	reverse	reverse	ADJ
iajs-820	39	48	bias	bias	NOUN
iajs-820	39	49	(	(	PUNCT
iajs-820	39	50	0	0	NUM
iajs-820	39	51	–	–	SYM
iajs-820	39	52	1.2	1.2	NUM
iajs-820	39	53	)	)	PUNCT
iajs-820	39	54	volt	volt	NOUN
iajs-820	39	55	at	at	ADP
iajs-820	39	56	frequency	frequency	NOUN
iajs-820	39	57	equal	equal	ADJ
iajs-820	39	58	to	to	ADP
iajs-820	39	59	100khz	100khz	NUM
iajs-820	39	60	has	have	AUX
iajs-820	39	61	been	be	AUX
iajs-820	39	62	studied	study	VERB
iajs-820	39	63	,	,	PUNCT
iajs-820	39	64	for	for	ADP
iajs-820	39	65	a	a	DET
iajs-820	39	66	-	-	PUNCT
iajs-820	39	67	ge	ge	NOUN
iajs-820	39	68	:	:	PUNCT
iajs-820	39	69	sb	sb	PROPN
iajs-820	39	70	/	/	SYM
iajs-820	39	71	c	c	PROPN
iajs-820	39	72	-	-	PUNCT
iajs-820	39	73	si	si	NOUN
iajs-820	39	74	heterojunction	heterojunction	NOUN
iajs-820	39	75	at	at	ADP
iajs-820	39	76	different	different	ADJ
iajs-820	39	77	thicknesses	thickness	NOUN
iajs-820	39	78	of	of	ADP
iajs-820	39	79	ge	ge	PROPN
iajs-820	39	80	:	:	PUNCT
iajs-820	39	81	sb	sb	PROPN
iajs-820	39	82	layer	layer	NOUN
iajs-820	39	83	and	and	CCONJ
iajs-820	39	84	annealing	anneal	VERB
iajs-820	39	85	temperatures	temperature	NOUN
iajs-820	39	86	are	be	AUX
iajs-820	39	87	showed	show	VERB
iajs-820	39	88	in	in	ADP
iajs-820	39	89	fig	fig	NOUN
iajs-820	39	90	.	.	PUNCT
iajs-820	40	1	(	(	PUNCT
iajs-820	40	2	3	3	NUM
iajs-820	40	3	)	)	PUNCT
iajs-820	40	4	.	.	PUNCT
iajs-820	41	1	it	it	PRON
iajs-820	41	2	is	be	AUX
iajs-820	41	3	clear	clear	ADJ
iajs-820	41	4	that	that	SCONJ
iajs-820	41	5	the	the	DET
iajs-820	41	6	capacitance	capacitance	NOUN
iajs-820	41	7	decreases	decrease	VERB
iajs-820	41	8	with	with	ADP
iajs-820	41	9	the	the	DET
iajs-820	41	10	increase	increase	NOUN
iajs-820	41	11	of	of	ADP
iajs-820	41	12	the	the	DET
iajs-820	41	13	reverse	reverse	ADJ
iajs-820	41	14	bias	bias	NOUN
iajs-820	41	15	voltage	voltage	NOUN
iajs-820	41	16	and	and	CCONJ
iajs-820	41	17	annealing	anneal	VERB
iajs-820	41	18	temperature	temperature	NOUN
iajs-820	41	19	.	.	PUNCT
iajs-820	42	1	this	this	DET
iajs-820	42	2	result	result	NOUN
iajs-820	42	3	is	be	AUX
iajs-820	42	4	confirmed	confirm	VERB
iajs-820	42	5	by	by	ADP
iajs-820	42	6	equation	equation	NOUN
iajs-820	42	7	(	(	PUNCT
iajs-820	42	8	1	1	NUM
iajs-820	42	9	)	)	PUNCT
iajs-820	42	10	and	and	CCONJ
iajs-820	42	11	the	the	DET
iajs-820	42	12	decreae	decreae	ADJ
iajs-820	42	13	was	be	AUX
iajs-820	42	14	nonlinear	nonlinear	ADJ
iajs-820	42	15	as	as	SCONJ
iajs-820	42	16	shown	show	VERB
iajs-820	42	17	in	in	ADP
iajs-820	42	18	fig	fig	NOUN
iajs-820	42	19	.	.	PUNCT
iajs-820	43	1	(	(	PUNCT
iajs-820	43	2	3	3	NUM
iajs-820	43	3	)	)	PUNCT
iajs-820	43	4	.	.	PUNCT
iajs-820	44	1	we	we	PRON
iajs-820	44	2	can	can	AUX
iajs-820	44	3	observe	observe	VERB
iajs-820	44	4	from	from	ADP
iajs-820	44	5	table	table	NOUN
iajs-820	44	6	(	(	PUNCT
iajs-820	44	7	2	2	NUM
iajs-820	44	8	)	)	PUNCT
iajs-820	44	9	,	,	PUNCT
iajs-820	44	10	that	that	SCONJ
iajs-820	44	11	the	the	DET
iajs-820	44	12	capacitance	capacitance	NOUN
iajs-820	44	13	at	at	ADP
iajs-820	44	14	zero	zero	NUM
iajs-820	44	15	bias	bias	NOUN
iajs-820	44	16	voltage	voltage	NOUN
iajs-820	44	17	(	(	PUNCT
iajs-820	44	18	co	co	NOUN
iajs-820	44	19	)	)	PUNCT
iajs-820	44	20	decreases	decrease	VERB
iajs-820	44	21	with	with	ADP
iajs-820	44	22	the	the	DET
iajs-820	44	23	increasing	increasing	NOUN
iajs-820	44	24	of	of	ADP
iajs-820	44	25	the	the	DET
iajs-820	44	26	annealing	anneal	VERB
iajs-820	44	27	temperatures	temperature	NOUN
iajs-820	44	28	for	for	ADP
iajs-820	44	29	a	a	DET
iajs-820	44	30	-	-	PUNCT
iajs-820	44	31	ge	ge	NOUN
iajs-820	44	32	:	:	PUNCT
iajs-820	44	33	sb	sb	PROPN
iajs-820	44	34	/	/	SYM
iajs-820	44	35	c	c	PROPN
iajs-820	44	36	-	-	PUNCT
iajs-820	44	37	si	si	NOUN
iajs-820	44	38	junctions	junction	NOUN
iajs-820	44	39	and	and	CCONJ
iajs-820	44	40	this	this	DET
iajs-820	44	41	behavior	behavior	NOUN
iajs-820	44	42	is	be	AUX
iajs-820	44	43	due	due	ADJ
iajs-820	44	44	to	to	ADP
iajs-820	44	45	the	the	DET
iajs-820	44	46	surface	surface	NOUN
iajs-820	44	47	states	state	NOUN
iajs-820	44	48	which	which	PRON
iajs-820	44	49	leads	lead	VERB
iajs-820	44	50	to	to	ADP
iajs-820	44	51	an	an	DET
iajs-820	44	52	increase	increase	NOUN
iajs-820	44	53	in	in	ADP
iajs-820	44	54	the	the	DET
iajs-820	44	55	depletion	depletion	NOUN
iajs-820	44	56	layer	layer	NOUN
iajs-820	44	57	and	and	CCONJ
iajs-820	44	58	a	a	DET
iajs-820	44	59	decrease	decrease	NOUN
iajs-820	44	60	of	of	ADP
iajs-820	44	61	the	the	DET
iajs-820	44	62	capacitance	capacitance	NOUN
iajs-820	44	63	.	.	PUNCT
iajs-820	45	1	the	the	DET
iajs-820	45	2	inverse	inverse	NOUN
iajs-820	45	3	capacitance	capacitance	NOUN
iajs-820	45	4	square	square	NOUN
iajs-820	45	5	is	be	AUX
iajs-820	45	6	p	p	PRON
iajs-820	45	7	lotted	lot	VERB
iajs-820	45	8	against	against	ADP
iajs-820	45	9	applied	apply	VERB
iajs-820	45	10	reverse	reverse	ADJ
iajs-820	45	11	bias	bias	NOUN
iajs-820	45	12	voltage	voltage	NOUN
iajs-820	45	13	for	for	ADP
iajs-820	45	14	age	age	NOUN
iajs-820	45	15	:	:	PUNCT
iajs-820	45	16	sb	sb	NOUN
iajs-820	45	17	/	/	SYM
iajs-820	45	18	c	c	PROPN
iajs-820	45	19	-	-	PUNCT
iajs-820	45	20	si	si	NOUN
iajs-820	45	21	heterojunction	heterojunction	NOUN
iajs-820	45	22	at	at	ADP
iajs-820	45	23	different	different	ADJ
iajs-820	45	24	annealing	anneal	VERB
iajs-820	45	25	temperatures	temperature	NOUN
iajs-820	45	26	as	as	SCONJ
iajs-820	45	27	shown	show	VERB
iajs-820	45	28	in	in	ADP
iajs-820	45	29	fig	fig	NOUN
iajs-820	45	30	.	.	PUNCT
iajs-820	46	1	(	(	PUNCT
iajs-820	46	2	4	4	NUM
iajs-820	46	3	)	)	PUNCT
iajs-820	46	4	.	.	PUNCT
iajs-820	47	1	the	the	DET
iajs-820	47	2	plots	plot	NOUN
iajs-820	47	3	revealed	reveal	VERB
iajs-820	47	4	straight	straight	ADJ
iajs-820	47	5	line	line	NOUN
iajs-820	47	6	relationship	relationship	NOUN
iajs-820	47	7	which	which	PRON
iajs-820	47	8	means	mean	VERB
iajs-820	47	9	that	that	SCONJ
iajs-820	47	10	the	the	DET
iajs-820	47	11	junction	junction	NOUN
iajs-820	47	12	was	be	AUX
iajs-820	47	13	of	of	ADP
iajs-820	47	14	an	an	DET
iajs-820	47	15	abrupt	abrupt	ADJ
iajs-820	47	16	type	type	NOUN
iajs-820	47	17	.	.	PUNCT
iajs-820	48	1	the	the	DET
iajs-820	48	2	interception	interception	NOUN
iajs-820	48	3	of	of	ADP
iajs-820	48	4	the	the	DET
iajs-820	48	5	straight	straight	ADJ
iajs-820	48	6	line	line	NOUN
iajs-820	48	7	with	with	ADP
iajs-820	48	8	the	the	DET
iajs-820	48	9	voltage	voltage	NOUN
iajs-820	48	10	axis	axis	NOUN
iajs-820	48	11	at	at	ADP
iajs-820	48	12	(	(	PUNCT
iajs-820	48	13	1	1	NUM
iajs-820	48	14	/	/	SYM
iajs-820	48	15	c	c	NOUN
iajs-820	48	16	2	2	NUM
iajs-820	48	17	=	=	SYM
iajs-820	48	18	0	0	NUM
iajs-820	48	19	)	)	PUNCT
iajs-820	48	20	,	,	PUNCT
iajs-820	48	21	represents	represent	VERB
iajs-820	48	22	the	the	DET
iajs-820	48	23	built	build	VERB
iajs-820	48	24	-	-	PUNCT
iajs-820	48	25	in	in	ADP
iajs-820	48	26	potential	potential	NOUN
iajs-820	48	27	.	.	PUNCT
iajs-820	49	1	we	we	PRON
iajs-820	49	2	can	can	AUX
iajs-820	49	3	see	see	VERB
iajs-820	49	4	from	from	ADP
iajs-820	49	5	table	table	NOUN
iajs-820	49	6	(	(	PUNCT
iajs-820	49	7	2	2	NUM
iajs-820	49	8	)	)	PUNCT
iajs-820	49	9	and	and	CCONJ
iajs-820	49	10	that	that	SCONJ
iajs-820	49	11	the	the	DET
iajs-820	49	12	variation	variation	NOUN
iajs-820	49	13	of	of	ADP
iajs-820	49	14	built	build	VERB
iajs-820	49	15	-	-	PUNCT
iajs-820	49	16	in	in	ADP
iajs-820	49	17	potential	potential	ADJ
iajs-820	49	18	(	(	PUNCT
iajs-820	49	19	vbi	vbi	NOUN
iajs-820	49	20	)	)	PUNCT
iajs-820	49	21	from	from	ADP
iajs-820	49	22	0.589	0.589	NUM
iajs-820	49	23	to	to	PART
iajs-820	49	24	0.893	0.893	NUM
iajs-820	49	25	volt	volt	NOUN
iajs-820	49	26	when	when	SCONJ
iajs-820	49	27	annealing	anneal	VERB
iajs-820	49	28	temperatures	temperature	NOUN
iajs-820	49	29	changes	change	VERB
iajs-820	49	30	from	from	ADP
iajs-820	49	31	room	room	NOUN
iajs-820	49	32	temperature	temperature	NOUN
iajs-820	49	33	to	to	ADP
iajs-820	49	34	473	473	NUM
iajs-820	49	35	k.	k.	NOUN
iajs-820	49	36	conclusion	conclusion	NOUN
iajs-820	49	37	we	we	PRON
iajs-820	49	38	get	get	VERB
iajs-820	49	39	from	from	ADP
iajs-820	49	40	the	the	DET
iajs-820	49	41	study	study	NOUN
iajs-820	49	42	the	the	DET
iajs-820	49	43	effect	effect	NOUN
iajs-820	49	44	of	of	ADP
iajs-820	49	45	annealing	anneal	VERB
iajs-820	49	46	temperature	temperature	NOUN
iajs-820	49	47	on	on	ADP
iajs-820	49	48	the	the	DET
iajs-820	49	49	structure	structure	NOUN
iajs-820	49	50	of	of	ADP
iajs-820	49	51	ge	ge	PROPN
iajs-820	49	52	:	:	PUNCT
iajs-820	49	53	sb	sb	PROPN
iajs-820	49	54	and	and	CCONJ
iajs-820	49	55	electrical	electrical	ADJ
iajs-820	49	56	properties	property	NOUN
iajs-820	49	57	of	of	ADP
iajs-820	49	58	n	n	CCONJ
iajs-820	49	59	-	-	PUNCT
iajs-820	49	60	ge	ge	PROPN
iajs-820	49	61	:	:	PUNCT
iajs-820	49	62	sb	sb	PROPN
iajs-820	49	63	/	/	SYM
iajs-820	49	64	p	p	ADJ
iajs-820	49	65	-	-	PUNCT
iajs-820	49	66	si	si	NOUN
iajs-820	49	67	heterojunction	heterojunction	NOUN
iajs-820	49	68	the	the	DET
iajs-820	49	69	junction	junction	NOUN
iajs-820	49	70	is	be	AUX
iajs-820	49	71	abrupt	abrupt	ADJ
iajs-820	49	72	type	type	NOUN
iajs-820	49	73	and	and	CCONJ
iajs-820	49	74	the	the	DET
iajs-820	49	75	built	build	VERB
iajs-820	49	76	in	in	ADP
iajs-820	49	77	potential	potential	ADJ
iajs-820	49	78	(	(	PUNCT
iajs-820	49	79	vbi	vbi	X
iajs-820	49	80	.	.	PUNCT
iajs-820	49	81	)	)	PUNCT
iajs-820	50	1	for	for	ADP
iajs-820	50	2	the	the	DET
iajs-820	50	3	n	n	CCONJ
iajs-820	50	4	-	-	PUNCT
iajs-820	50	5	ge	ge	PROPN
iajs-820	50	6	:	:	PUNCT
iajs-820	50	7	sb	sb	PROPN
iajs-820	50	8	/	/	SYM
iajs-820	50	9	p	p	ADJ
iajs-820	50	10	-	-	PUNCT
iajs-820	50	11	si	si	NOUN
iajs-820	50	12	system	system	NOUN
iajs-820	50	13	was	be	AUX
iajs-820	50	14	found	find	VERB
iajs-820	50	15	to	to	PART
iajs-820	50	16	increase	increase	VERB
iajs-820	50	17	with	with	ADP
iajs-820	50	18	the	the	DET
iajs-820	50	19	increase	increase	NOUN
iajs-820	50	20	of	of	ADP
iajs-820	50	21	annealing	anneal	VERB
iajs-820	50	22	temperature	temperature	NOUN
iajs-820	50	23	.	.	PUNCT
iajs-820	51	1	references	reference	NOUN
iajs-820	51	2	1	1	NUM
iajs-820	51	3	.	.	PUNCT
iajs-820	52	1	ietal	ietal	PROPN
iajs-820	52	2	,	,	PUNCT
iajs-820	52	3	r.	r.	PROPN
iajs-820	52	4	e.	e.	PROPN
iajs-820	52	5	;	;	PUNCT
iajs-820	52	6	tavrina	tavrina	PROPN
iajs-820	52	7	,	,	PUNCT
iajs-820	52	8	t.	t.	PROPN
iajs-820	52	9	v.	v.	PROPN
iajs-820	52	10	;	;	PUNCT
iajs-820	52	11	us	we	PRON
iajs-820	52	12	,	,	PUNCT
iajs-820	52	13	m	m	VERB
iajs-820	52	14	.	.	PUNCT
iajs-820	52	15	;	;	PUNCT
iajs-820	53	1	dresselhaus	dresselhaus	NOUN
iajs-820	53	2	,	,	PUNCT
iajs-820	53	3	m.	m.	NOUN
iajs-820	53	4	s.	s.	PROPN
iajs-820	53	5	;	;	PUNCT
iajs-820	53	6	cronin	cronin	PROPN
iajs-820	53	7	,	,	PUNCT
iajs-820	53	8	s.	s.	PROPN
iajs-820	53	9	b.	b.	PROPN
iajs-820	53	10	and	and	CCONJ
iajs-820	53	11	rabin	rabin	PROPN
iajs-820	53	12	,	,	PUNCT
iajs-820	53	13	o.	o.	PROPN
iajs-820	53	14	(	(	PUNCT
iajs-820	53	15	2002	2002	NUM
iajs-820	53	16	)	)	PUNCT
iajs-820	53	17	,	,	PUNCT
iajs-820	53	18	quantum	quantum	NOUN
iajs-820	53	19	size	size	NOUN
iajs-820	53	20	effects	effect	NOUN
iajs-820	53	21	in	in	ADP
iajs-820	53	22	iv	iv	NUM
iajs-820	53	23	-	-	PUNCT
iajs-820	53	24	vi	vi	NOUN
iajs-820	53	25	quantum	quantum	NOUN
iajs-820	53	26	wells	well	NOUN
iajs-820	53	27	,	,	PUNCT
iajs-820	53	28	physica	physica	NOUN
iajs-820	53	29	.	.	PUNCT
iajs-820	54	1	2	2	X
iajs-820	54	2	.	.	X
iajs-820	54	3	satio	satio	NOUN
iajs-820	54	4	,	,	PUNCT
iajs-820	54	5	n.	n.	PROPN
iajs-820	54	6	;	;	PUNCT
iajs-820	54	7	aoki	aoki	PROPN
iajs-820	54	8	,	,	PUNCT
iajs-820	54	9	k.	k.	PROPN
iajs-820	54	10	;	;	PUNCT
iajs-820	54	11	sannomiya	sannomiya	PROPN
iajs-820	54	12	,	,	PUNCT
iajs-820	54	13	h.	h.	PROPN
iajs-820	54	14	and	and	CCONJ
iajs-820	54	15	yamaguchi	yamaguchi	PROPN
iajs-820	54	16	,	,	PUNCT
iajs-820	54	17	t.	t.	PROPN
iajs-820	54	18	(	(	PUNCT
iajs-820	54	19	1984),thin	1984),thin	NUM
iajs-820	54	20	solid	solid	ADJ
iajs-820	54	21	films	film	NOUN
iajs-820	54	22	,	,	PUNCT
iajs-820	54	23	115	115	NUM
iajs-820	54	24	,	,	PUNCT
iajs-820	54	25	253	253	NUM
iajs-820	54	26	.	.	X
iajs-820	55	1	3	3	X
iajs-820	55	2	.	.	X
iajs-820	55	3	rudder	rudder	NOUN
iajs-820	55	4	,	,	PUNCT
iajs-820	55	5	r.	r.	PROPN
iajs-820	55	6	;	;	PUNCT
iajs-820	55	7	cook	cook	VERB
iajs-820	55	8	,	,	PUNCT
iajs-820	55	9	j.	j.	PROPN
iajs-820	55	10	and	and	CCONJ
iajs-820	55	11	lucovsy	lucovsy	PROPN
iajs-820	55	12	,	,	PUNCT
iajs-820	55	13	g.	g.	PROPN
iajs-820	55	14	(	(	PUNCT
iajs-820	56	1	1985),j	1985),j	NUM
iajs-820	56	2	.	.	PUNCT
iajs-820	56	3	vac	vac	NOUN
iajs-820	56	4	.	.	PUNCT
iajs-820	57	1	sci	sci	PROPN
iajs-820	57	2	.	.	PUNCT
iajs-820	57	3	tech	tech	PROPN
iajs-820	57	4	.	.	PUNCT
iajs-820	57	5	,	,	PUNCT
iajs-820	58	1	v.	v.	PROPN
iajs-820	58	2	a3	a3	PROPN
iajs-820	58	3	,	,	PUNCT
iajs-820	58	4	567	567	NUM
iajs-820	58	5	.	.	NOUN
iajs-820	58	6	4	4	X
iajs-820	58	7	.	.	X
iajs-820	58	8	malinovska	malinovska	PROPN
iajs-820	58	9	,	,	PUNCT
iajs-820	58	10	d.	d.	PROPN
iajs-820	58	11	;	;	PUNCT
iajs-820	58	12	nedial	nedial	ADJ
iajs-820	58	13	kova	kova	PROPN
iajs-820	58	14	,	,	PUNCT
iajs-820	58	15	l.	l.	PROPN
iajs-820	58	16	and	and	CCONJ
iajs-820	58	17	kudoyarova	kudoyarova	PROPN
iajs-820	58	18	,	,	PUNCT
iajs-820	58	19	v.	v.	PROPN
iajs-820	58	20	(	(	PUNCT
iajs-820	58	21	1993	1993	NUM
iajs-820	58	22	)	)	PUNCT
iajs-820	58	23	,	,	PUNCT
iajs-820	58	24	solar	solar	ADJ
iajs-820	58	25	ener	ener	NOUN
iajs-820	58	26	.	.	PUNCT
iajs-820	59	1	mater	mater	NOUN
iajs-820	59	2	.	.	PUNCT
iajs-820	60	1	and	and	CCONJ
iajs-820	60	2	solar	solar	ADJ
iajs-820	60	3	cells	cell	NOUN
iajs-820	60	4	,	,	PUNCT
iajs-820	60	5	v.30	v.30	NOUN
iajs-820	60	6	,	,	PUNCT
iajs-820	60	7	27	27	NUM
iajs-820	60	8	.	.	NOUN
iajs-820	61	1	5	5	NUM
iajs-820	61	2	.	.	X
iajs-820	61	3	sinha	sinha	NOUN
iajs-820	61	4	,	,	PUNCT
iajs-820	61	5	a.	a.	NOUN
iajs-820	61	6	;	;	PUNCT
iajs-820	61	7	agarwal	agarwal	PROPN
iajs-820	61	8	,	,	PUNCT
iajs-820	61	9	p.	p.	NOUN
iajs-820	61	10	;	;	PUNCT
iajs-820	62	1	kumar	kumar	PROPN
iajs-820	62	2	,	,	PUNCT
iajs-820	62	3	s.	s.	PROPN
iajs-820	62	4	;	;	PUNCT
iajs-820	62	5	agarwal	agarwal	PROPN
iajs-820	62	6	,	,	PUNCT
iajs-820	62	7	s.	s.	PROPN
iajs-820	62	8	;	;	PUNCT
iajs-820	62	9	dixit	dixit	PROPN
iajs-820	62	10	,	,	PUNCT
iajs-820	62	11	p.	p.	PROPN
iajs-820	62	12	;	;	PUNCT
iajs-820	62	13	panwar	panwar	PROPN
iajs-820	62	14	,	,	PUNCT
iajs-820	62	15	o.	o.	PROPN
iajs-820	62	16	;	;	PUNCT
iajs-820	62	17	seth	seth	PROPN
iajs-820	62	18	,	,	PUNCT
iajs-820	62	19	t.	t.	PROPN
iajs-820	62	20	and	and	CCONJ
iajs-820	62	21	bhattacharyya	bhattacharyya	ADJ
iajs-820	62	22	,	,	PUNCT
iajs-820	62	23	r.	r.	PROPN
iajs-820	62	24	(	(	PUNCT
iajs-820	62	25	1993	1993	NUM
iajs-820	62	26	)	)	PUNCT
iajs-820	62	27	,	,	PUNCT
iajs-820	62	28	phys	phy	NOUN
iajs-820	62	29	.	.	PUNCT
iajs-820	63	1	of	of	ADP
iajs-820	63	2	semi	semi	ADJ
iajs-820	63	3	.	.	PUNCT
iajs-820	63	4	dev	dev	PROPN
iajs-820	63	5	.	.	PUNCT
iajs-820	64	1	p.	p.	NOUN
iajs-820	64	2	595	595	NUM
iajs-820	64	3	.	.	PUNCT
iajs-820	65	1	6	6	NUM
iajs-820	65	2	.	.	X
iajs-820	65	3	mott	mott	PROPN
iajs-820	65	4	,	,	PUNCT
iajs-820	65	5	n.	n.	PROPN
iajs-820	65	6	f.	f.	PROPN
iajs-820	65	7	and	and	CCONJ
iajs-820	65	8	davis	davis	PROPN
iajs-820	65	9	,	,	PUNCT
iajs-820	65	10	e.a	e.a	PROPN
iajs-820	65	11	.	.	PROPN
iajs-820	65	12	(	(	PUNCT
iajs-820	65	13	1979	1979	NUM
iajs-820	65	14	)	)	PUNCT
iajs-820	65	15	,	,	PUNCT
iajs-820	65	16	electronic	electronic	ADJ
iajs-820	65	17	processes	process	NOUN
iajs-820	65	18	in	in	ADP
iajs-820	65	19	non	non	ADJ
iajs-820	65	20	-	-	ADJ
iajs-820	65	21	crystalline	crystalline	ADJ
iajs-820	65	22	materials	material	NOUN
iajs-820	65	23	,	,	PUNCT
iajs-820	65	24	2	2	NUM
iajs-820	65	25	nd	nd	NOUN
iajs-820	65	26	ed	ed	NOUN
iajs-820	65	27	.	.	PUNCT
iajs-820	66	1	university	university	NOUN
iajs-820	66	2	press	press	NOUN
iajs-820	66	3	oxford	oxford	NOUN
iajs-820	66	4	.	.	PUNCT
iajs-820	67	1	7	7	X
iajs-820	67	2	.	.	X
iajs-820	67	3	holmes	holmes	PROPN
iajs-820	67	4	,	,	PUNCT
iajs-820	67	5	p.j	p.j	PROPN
iajs-820	67	6	.	.	PROPN
iajs-820	67	7	(	(	PUNCT
iajs-820	67	8	1962	1962	NUM
iajs-820	67	9	)	)	PUNCT
iajs-820	67	10	,	,	PUNCT
iajs-820	67	11	the	the	DET
iajs-820	67	12	electrochemistry	electrochemistry	NOUN
iajs-820	67	13	of	of	ADP
iajs-820	67	14	semiconductors	semiconductor	NOUN
iajs-820	67	15	,	,	PUNCT
iajs-820	67	16	academic	academic	ADJ
iajs-820	67	17	press	press	NOUN
iajs-820	67	18	,	,	PUNCT
iajs-820	67	19	new	new	PROPN
iajs-820	67	20	york	york	PROPN
iajs-820	67	21	.	.	PROPN
iajs-820	68	1	8	8	X
iajs-820	68	2	.	.	X
iajs-820	68	3	etal	etal	NOUN
iajs-820	68	4	,	,	PUNCT
iajs-820	68	5	o.	o.	PROPN
iajs-820	68	6	a.	a.	NOUN
iajs-820	68	7	a.	a.	PROPN
iajs-820	68	8	(	(	PUNCT
iajs-820	68	9	1994	1994	NUM
iajs-820	68	10	)	)	PUNCT
iajs-820	68	11	,	,	PUNCT
iajs-820	68	12	the	the	DET
iajs-820	68	13	nature	nature	NOUN
iajs-820	68	14	of	of	ADP
iajs-820	68	15	some	some	DET
iajs-820	68	16	contacts	contact	NOUN
iajs-820	68	17	(	(	PUNCT
iajs-820	68	18	al	al	PROPN
iajs-820	68	19	,	,	PUNCT
iajs-820	68	20	in	in	ADP
iajs-820	68	21	,	,	PUNCT
iajs-820	68	22	ge	ge	PROPN
iajs-820	68	23	,	,	PUNCT
iajs-820	68	24	sb	sb	PROPN
iajs-820	68	25	and	and	CCONJ
iajs-820	68	26	bi	bi	PROPN
iajs-820	68	27	)	)	PUNCT
iajs-820	68	28	to	to	ADP
iajs-820	68	29	selenium	selenium	NOUN
iajs-820	68	30	films	film	NOUN
iajs-820	68	31	,	,	PUNCT
iajs-820	68	32	tr	tr	VERB
iajs-820	68	33	.	.	PROPN
iajs-820	68	34	j.	j.	PROPN
iajs-820	68	35	of	of	ADP
iajs-820	68	36	physics	physics	PROPN
iajs-820	68	37	,	,	PUNCT
iajs-820	68	38	18	18	NUM
iajs-820	68	39	,	,	PUNCT
iajs-820	68	40	727	727	NUM
iajs-820	68	41	-	-	SYM
iajs-820	68	42	733	733	NUM
iajs-820	68	43	.	.	PUNCT
iajs-820	69	1	9	9	NUM
iajs-820	69	2	.	.	X
iajs-820	69	3	holt	holt	PROPN
iajs-820	69	4	,	,	PUNCT
iajs-820	69	5	d.	d.	PROPN
iajs-820	69	6	(	(	PUNCT
iajs-820	69	7	1966	1966	NUM
iajs-820	69	8	)	)	PUNCT
iajs-820	69	9	,	,	PUNCT
iajs-820	69	10	j.phys.chem.solids,27	j.phys.chem.solids,27	PROPN
iajs-820	69	11	,	,	PUNCT
iajs-820	69	12	1050	1050	NUM
iajs-820	69	13	.	.	PUNCT
iajs-820	70	1	ibn	ibn	PROPN
iajs-820	70	2	alhaitham	alhaitham	PROPN
iajs-820	70	3	j.	j.	PROPN
iajs-820	70	4	for	for	ADP
iajs-820	70	5	pure	pure	ADJ
iajs-820	70	6	&	&	CCONJ
iajs-820	70	7	appl	appl	PROPN
iajs-820	70	8	.	.	PUNCT
iajs-820	71	1	sci	sci	PROPN
iajs-820	71	2	.	.	PUNCT
iajs-820	71	3	vol.24	vol.24	NOUN
iajs-820	71	4	(	(	PUNCT
iajs-820	71	5	1	1	NUM
iajs-820	71	6	)	)	PUNCT
iajs-820	71	7	2011	2011	NUM
iajs-820	71	8	10	10	NUM
iajs-820	71	9	.	.	PUNCT
iajs-820	72	1	sharma	sharma	PROPN
iajs-820	72	2	,	,	PUNCT
iajs-820	72	3	b.	b.	PROPN
iajs-820	72	4	l.	l.	PROPN
iajs-820	72	5	;	;	PUNCT
iajs-820	72	6	purohit	purohit	PROPN
iajs-820	72	7	r.k	r.k	PROPN
iajs-820	72	8	.	.	PROPN
iajs-820	72	9	and	and	CCONJ
iajs-820	72	10	mukerjee	mukerjee	PROPN
iajs-820	72	11	,	,	PUNCT
iajs-820	72	12	s.n	s.n	PROPN
iajs-820	72	13	.	.	PROPN
iajs-820	72	14	(	(	PUNCT
iajs-820	72	15	1970	1970	NUM
iajs-820	72	16	)	)	PUNCT
iajs-820	72	17	,	,	PUNCT
iajs-820	72	18	infrared	infrared	PROPN
iajs-820	72	19	physics	physics	PROPN
iajs-820	72	20	,	,	PUNCT
iajs-820	72	21	10	10	NUM
iajs-820	72	22	,	,	PUNCT
iajs-820	72	23	225	225	NUM
iajs-820	72	24	-	-	SYM
iajs-820	72	25	231	231	NUM
iajs-820	72	26	,	,	PUNCT
iajs-820	72	27	pergamon	pergamon	NOUN
iajs-820	72	28	press	press	PROPN
iajs-820	72	29	,	,	PUNCT
iajs-820	72	30	p	p	PROPN
iajs-820	72	31	rinted	rinte	VERB
iajs-820	72	32	in	in	ADP
iajs-820	72	33	great	great	ADJ
iajs-820	72	34	britain	britain	PROPN
iajs-820	72	35	.	.	PUNCT
iajs-820	73	1	11	11	NUM
iajs-820	73	2	.	.	PUNCT
iajs-820	74	1	milnes	milne	NOUN
iajs-820	74	2	,	,	PUNCT
iajs-820	74	3	a.	a.	NOUN
iajs-820	74	4	g.	g.	PROPN
iajs-820	74	5	and	and	CCONJ
iajs-820	74	6	feucht	feucht	PROPN
iajs-820	74	7	,	,	PUNCT
iajs-820	74	8	d.	d.	PROPN
iajs-820	74	9	l.	l.	PROPN
iajs-820	74	10	(	(	PUNCT
iajs-820	74	11	1972	1972	NUM
iajs-820	74	12	)	)	PUNCT
iajs-820	74	13	,	,	PUNCT
iajs-820	74	14	heterojunctions	heterojunction	NOUN
iajs-820	74	15	and	and	CCONJ
iajs-820	74	16	metal	metal	NOUN
iajs-820	74	17	-	-	PUNCT
iajs-820	74	18	semiconductor	semiconductor	NOUN
iajs-820	74	19	junctions	junction	NOUN
iajs-820	74	20	,	,	PUNCT
iajs-820	74	21	academic	academic	ADJ
iajs-820	74	22	press	press	NOUN
iajs-820	74	23	,	,	PUNCT
iajs-820	74	24	new	new	PROPN
iajs-820	74	25	york	york	PROPN
iajs-820	74	26	.	.	PUNCT
iajs-820	75	1	12	12	NUM
iajs-820	75	2	.	.	PUNCT
iajs-820	76	1	seager	seager	PROPN
iajs-820	76	2	,	,	PUNCT
iajs-820	76	3	c.h	c.h	PROPN
iajs-820	76	4	.	.	PUNCT
iajs-820	76	5	;	;	PUNCT
iajs-820	76	6	knoter	knoter	PROPN
iajs-820	76	7	m.l	m.l	PROPN
iajs-820	76	8	.	.	PROPN
iajs-820	76	9	and	and	CCONJ
iajs-820	76	10	clark	clark	PROPN
iajs-820	76	11	,	,	PUNCT
iajs-820	76	12	a.h	a.h	PROPN
iajs-820	76	13	.	.	PROPN
iajs-820	76	14	(	(	PUNCT
iajs-820	76	15	1974	1974	NUM
iajs-820	76	16	)	)	PUNCT
iajs-820	76	17	,	,	PUNCT
iajs-820	76	18	amorphous	amorphous	ADJ
iajs-820	76	19	and	and	CCONJ
iajs-820	76	20	liquid	liquid	ADJ
iajs-820	76	21	semiconductors	semiconductor	NOUN
iajs-820	76	22	"	"	PUNCT
iajs-820	76	23	,	,	PUNCT
iajs-820	76	24	proceedings	proceeding	NOUN
iajs-820	76	25	of	of	ADP
iajs-820	76	26	the	the	DET
iajs-820	76	27	fifth	fifth	ADJ
iajs-820	76	28	international	international	ADJ
iajs-820	76	29	conference	conference	NOUN
iajs-820	76	30	on	on	ADP
iajs-820	76	31	amorphous	amorphous	ADJ
iajs-820	76	32	and	and	CCONJ
iajs-820	76	33	liquid	liquid	ADJ
iajs-820	76	34	semiconductors	semiconductor	NOUN
iajs-820	76	35	,	,	PUNCT
iajs-820	76	36	taylor	taylor	PROPN
iajs-820	76	37	and	and	CCONJ
iajs-820	76	38	francis	francis	PROPN
iajs-820	76	39	ltd	ltd	PROPN
iajs-820	76	40	-	-	PROPN
iajs-820	76	41	london	london	PROPN
iajs-820	76	42	.	.	PUNCT
iajs-820	77	1	table	table	NOUN
iajs-820	77	2	(	(	PUNCT
iajs-820	77	3	1	1	NUM
iajs-820	77	4	):	):	PUNCT
iajs-820	77	5	values	value	NOUN
iajs-820	77	6	of	of	ADP
iajs-820	77	7	ideality	ideality	NOUN
iajs-820	77	8	factor	factor	NOUN
iajs-820	77	9	(	(	PUNCT
iajs-820	77	10	β	β	NOUN
iajs-820	77	11	)	)	PUNCT
iajs-820	77	12	,	,	PUNCT
iajs-820	77	13	saturation	saturation	NOUN
iajs-820	77	14	current	current	NOUN
iajs-820	77	15	(	(	PUNCT
iajs-820	77	16	is	be	AUX
iajs-820	77	17	)	)	PUNCT
iajs-820	77	18	and	and	CCONJ
iajs-820	77	19	potential	potential	ADJ
iajs-820	77	20	barrier	barrier	NOUN
iajs-820	77	21	height	height	NOUN
iajs-820	77	22	(	(	PUNCT
iajs-820	77	23	фb	фb	NOUN
iajs-820	77	24	)	)	PUNCT
iajs-820	77	25	for	for	ADP
iajs-820	77	26	a	a	DET
iajs-820	77	27	-	-	PUNCT
iajs-820	77	28	ge	ge	NOUN
iajs-820	77	29	:	:	PUNCT
iajs-820	77	30	s	s	NOUN
iajs-820	77	31	b	b	X
iajs-820	77	32	/	/	SYM
iajs-820	77	33	c	c	NOUN
iajs-820	77	34	-	-	PUNCT
iajs-820	77	35	si	si	NOUN
iajs-820	77	36	heterojunction	heterojunction	NOUN
iajs-820	77	37	with	with	ADP
iajs-820	77	38	different	different	ADJ
iajs-820	77	39	thicknesses	thickness	NOUN
iajs-820	77	40	and	and	CCONJ
iajs-820	77	41	annealing	anneal	VERB
iajs-820	77	42	temperatures	temperature	NOUN
iajs-820	77	43	.	.	PUNCT
iajs-820	78	1	ta	ta	X
iajs-820	78	2	(	(	PUNCT
iajs-820	78	3	k	k	X
iajs-820	78	4	)	)	PUNCT
iajs-820	78	5			NOUN
iajs-820	78	6	is	be	AUX
iajs-820	78	7	(	(	PUNCT
iajs-820	78	8	μa	μa	NOUN
iajs-820	78	9	)	)	PUNCT
iajs-820	78	10	фb(ev	фb(ev	PROPN
iajs-820	78	11	)	)	PUNCT
iajs-820	79	1	r.t	r.t	PROPN
iajs-820	80	1	1.591	1.591	NUM
iajs-820	80	2	0.0104	0.0104	NUM
iajs-820	80	3	0.344	0.344	NUM
iajs-820	80	4	373	373	NUM
iajs-820	80	5	1.621	1.621	NUM
iajs-820	80	6	0.0096	0.0096	NUM
iajs-820	80	7	0.345	0.345	NUM
iajs-820	80	8	423	423	NUM
iajs-820	80	9	1.627	1.627	NUM
iajs-820	80	10	0.0085	0.0085	NUM
iajs-820	80	11	0.347	0.347	NUM
iajs-820	80	12	473	473	NUM
iajs-820	80	13	1.695	1.695	NUM
iajs-820	80	14	0.0067	0.0067	NUM
iajs-820	80	15	0.352	0.352	NUM
iajs-820	80	16	table	table	NOUN
iajs-820	80	17	(	(	PUNCT
iajs-820	80	18	2	2	NUM
iajs-820	80	19	):	):	PUNCT
iajs-820	80	20	values	value	NOUN
iajs-820	80	21	of	of	ADP
iajs-820	80	22	co	co	NOUN
iajs-820	80	23	and	and	CCONJ
iajs-820	80	24	vbi	vbi	PROPN
iajs-820	80	25	for	for	ADP
iajs-820	80	26	a	a	DET
iajs-820	80	27	-	-	PUNCT
iajs-820	80	28	ge	ge	NOUN
iajs-820	80	29	:	:	PUNCT
iajs-820	80	30	sb	sb	PROPN
iajs-820	80	31	/	/	SYM
iajs-820	80	32	c	c	PROPN
iajs-820	80	33	-	-	PUNCT
iajs-820	80	34	si	si	NOUN
iajs-820	80	35	heterojunction	heterojunction	NOUN
iajs-820	80	36	with	with	ADP
iajs-820	80	37	different	different	ADJ
iajs-820	80	38	thicknesses	thickness	NOUN
iajs-820	80	39	and	and	CCONJ
iajs-820	80	40	annealing	anneal	VERB
iajs-820	80	41	temperatures	temperature	NOUN
iajs-820	80	42	.	.	PUNCT
iajs-820	81	1	ta	ta	X
iajs-820	81	2	(	(	PUNCT
iajs-820	81	3	k	k	NOUN
iajs-820	81	4	)	)	PUNCT
iajs-820	81	5	co	co	NOUN
iajs-820	81	6	(	(	PUNCT
iajs-820	81	7	pf	pf	PROPN
iajs-820	81	8	)	)	PUNCT
iajs-820	81	9	vbi	vbi	PROPN
iajs-820	81	10	(	(	PUNCT
iajs-820	81	11	volt	volt	PROPN
iajs-820	81	12	)	)	PUNCT
iajs-820	81	13	r.t	r.t	PROPN
iajs-820	81	14	18.1	18.1	NUM
iajs-820	81	15	0.589	0.589	NUM
iajs-820	81	16	373	373	NUM
iajs-820	81	17	16.11	16.11	NUM
iajs-820	81	18	0.667	0.667	NUM
iajs-820	81	19	423	423	NUM
iajs-820	81	20	11.88	11.88	NUM
iajs-820	81	21	0.727	0.727	NUM
iajs-820	81	22	473	473	NUM
iajs-820	81	23	10.19	10.19	NUM
iajs-820	81	24	0.893	0.893	NUM
iajs-820	81	25	ibn	ibn	PROPN
iajs-820	81	26	alhaitham	alhaitham	NOUN
iajs-820	81	27	j.	j.	PROPN
iajs-820	81	28	for	for	ADP
iajs-820	81	29	pure	pure	ADJ
iajs-820	81	30	&	&	CCONJ
iajs-820	81	31	appl	appl	PROPN
iajs-820	81	32	.	.	PUNCT
iajs-820	82	1	sci	sci	PROPN
iajs-820	82	2	.	.	PUNCT
iajs-820	82	3	vol.24	vol.24	NOUN
iajs-820	82	4	(	(	PUNCT
iajs-820	82	5	1	1	NUM
iajs-820	82	6	)	)	PUNCT
iajs-820	82	7	2011	2011	NUM
iajs-820	82	8	(	(	PUNCT
iajs-820	82	9	a	a	NOUN
iajs-820	82	10	)	)	PUNCT
iajs-820	82	11	(	(	PUNCT
iajs-820	82	12	b	b	NOUN
iajs-820	82	13	)	)	PUNCT
iajs-820	82	14	fig.(1	fig.(1	NUM
iajs-820	82	15	):	):	PUNCT
iajs-820	82	16	x	x	X
iajs-820	82	17	-	-	NOUN
iajs-820	82	18	ray	ray	NOUN
iajs-820	82	19	diffraction	diffraction	NOUN
iajs-820	82	20	of	of	ADP
iajs-820	82	21	a	a	DET
iajs-820	82	22	-	-	PUNCT
iajs-820	82	23	ge	ge	PROPN
iajs-820	82	24	films	film	NOUN
iajs-820	82	25	at	at	ADP
iajs-820	82	26	(	(	PUNCT
iajs-820	82	27	a	a	NOUN
iajs-820	82	28	)	)	PUNCT
iajs-820	82	29	ta	ta	PROPN
iajs-820	83	1	=	=	PROPN
iajs-820	83	2	r.t	r.t	PROPN
iajs-820	83	3	(	(	PUNCT
iajs-820	83	4	b	b	NOUN
iajs-820	83	5	)	)	PUNCT
iajs-820	83	6	ta	ta	ADP
iajs-820	84	1	=	=	NOUN
iajs-820	84	2	473k	473k	PROPN
iajs-820	84	3	t=0.5	t=0.5	PUNCT
iajs-820	84	4	mm	mm	PROPN
iajs-820	84	5	-200	-200	PROPN
iajs-820	84	6	-150	-150	PROPN
iajs-820	84	7	-100	-100	PROPN
iajs-820	84	8	-50	-50	PUNCT
iajs-820	84	9	0	0	NUM
iajs-820	84	10	50	50	NUM
iajs-820	84	11	100	100	NUM
iajs-820	84	12	150	150	NUM
iajs-820	84	13	200	200	NUM
iajs-820	84	14	250	250	NUM
iajs-820	84	15	-2	-2	NOUN
iajs-820	84	16	-1.5	-1.5	NUM
iajs-820	84	17	-1	-1	PROPN
iajs-820	84	18	-0.5	-0.5	X
iajs-820	84	19	0	0	NUM
iajs-820	84	20	0.5	0.5	NUM
iajs-820	84	21	1	1	NUM
iajs-820	84	22	1.5	1.5	NUM
iajs-820	84	23	2	2	NUM
iajs-820	84	24	v(volt	v(volt	NOUN
iajs-820	84	25	)	)	PUNCT
iajs-820	85	1	i	i	PRON
iajs-820	85	2	(	(	PUNCT
iajs-820	85	3	m	m	PROPN
iajs-820	85	4	a	a	PRON
iajs-820	85	5	)	)	PUNCT
iajs-820	85	6	rt	rt	PROPN
iajs-820	85	7	373	373	NUM
iajs-820	85	8	k	k	NOUN
iajs-820	85	9	423	423	NUM
iajs-820	85	10	k	k	NOUN
iajs-820	85	11	473	473	NUM
iajs-820	85	12	k	k	NOUN
iajs-820	85	13	fig	fig	NOUN
iajs-820	85	14	.	.	PUNCT
iajs-820	86	1	(	(	PUNCT
iajs-820	86	2	2	2	NUM
iajs-820	86	3	):	):	PUNCT
iajs-820	86	4	i	i	PROPN
iajs-820	86	5	-	-	PUNCT
iajs-820	86	6	v	v	PROPN
iajs-820	86	7	characteristics	characteristic	NOUN
iajs-820	86	8	in	in	ADP
iajs-820	86	9	the	the	DET
iajs-820	86	10	dark	dark	NOUN
iajs-820	86	11	for	for	ADP
iajs-820	86	12	a	a	DET
iajs-820	86	13	-	-	PUNCT
iajs-820	86	14	ge	ge	NOUN
iajs-820	86	15	:	:	PUNCT
iajs-820	86	16	sb	sb	PROPN
iajs-820	86	17	/	/	SYM
iajs-820	86	18	c	c	AUX
iajs-820	86	19	-	-	PUNCT
iajs-820	86	20	si	si	NOUN
iajs-820	86	21	heterojunction	heterojunction	NOUN
iajs-820	86	22	at	at	ADP
iajs-820	86	23	forward	forward	ADV
iajs-820	86	24	and	and	CCONJ
iajs-820	86	25	reverse	reverse	ADJ
iajs-820	86	26	bias	bias	NOUN
iajs-820	86	27	voltage	voltage	NOUN
iajs-820	86	28	at	at	ADP
iajs-820	86	29	different	different	ADJ
iajs-820	86	30	annealing	anneal	VERB
iajs-820	86	31	temperatures	temperature	NOUN
iajs-820	86	32	ibn	ibn	PROPN
iajs-820	86	33	alhaitham	alhaitham	NOUN
iajs-820	86	34	j.	j.	PROPN
iajs-820	86	35	for	for	ADP
iajs-820	86	36	pure	pure	ADJ
iajs-820	86	37	&	&	CCONJ
iajs-820	86	38	appl	appl	PROPN
iajs-820	86	39	.	.	PUNCT
iajs-820	87	1	sci	sci	PROPN
iajs-820	87	2	.	.	PUNCT
iajs-820	87	3	vol.24	vol.24	NOUN
iajs-820	87	4	(	(	PUNCT
iajs-820	87	5	1	1	NUM
iajs-820	87	6	)	)	PUNCT
iajs-820	87	7	2011	2011	NUM
iajs-820	87	8	t=0.5	t=0.5	X
iajs-820	87	9	mm	mm	NOUN
iajs-820	87	10	6	6	NUM
iajs-820	87	11	10	10	NUM
iajs-820	87	12	14	14	NUM
iajs-820	87	13	18	18	NUM
iajs-820	87	14	22	22	NUM
iajs-820	87	15	-1.5	-1.5	NUM
iajs-820	87	16	-1	-1	PUNCT
iajs-820	87	17	-0.5	-0.5	X
iajs-820	87	18	0	0	NUM
iajs-820	87	19	v(volt	v(volt	NOUN
iajs-820	87	20	)	)	PUNCT
iajs-820	87	21	c	c	NOUN
iajs-820	88	1	(	(	PUNCT
iajs-820	88	2	p	p	NOUN
iajs-820	88	3	f	f	X
iajs-820	88	4	)	)	PUNCT
iajs-820	88	5	rt	rt	PROPN
iajs-820	88	6	373	373	NUM
iajs-820	88	7	k	k	NOUN
iajs-820	88	8	423	423	NUM
iajs-820	88	9	k	k	NOUN
iajs-820	88	10	473	473	NUM
iajs-820	88	11	k	k	NOUN
iajs-820	88	12	fig	fig	NOUN
iajs-820	88	13	.	.	PUNCT
iajs-820	89	1	(	(	PUNCT
iajs-820	89	2	3	3	NUM
iajs-820	89	3	):	):	PUNCT
iajs-820	89	4	the	the	DET
iajs-820	89	5	variation	variation	NOUN
iajs-820	89	6	of	of	ADP
iajs-820	89	7	capacitance	capacitance	NOUN
iajs-820	89	8	versus	versus	ADP
iajs-820	89	9	reverses	reverse	VERB
iajs-820	89	10	bias	bias	NOUN
iajs-820	89	11	voltage	voltage	NOUN
iajs-820	89	12	for	for	ADP
iajs-820	89	13	a	a	DET
iajs-820	89	14	-	-	PUNCT
iajs-820	89	15	ge	ge	NOUN
iajs-820	89	16	:	:	PUNCT
iajs-820	89	17	sb	sb	PROPN
iajs-820	89	18	/	/	SYM
iajs-820	89	19	c	c	PROPN
iajs-820	89	20	-	-	PUNCT
iajs-820	89	21	si	si	NOUN
iajs-820	89	22	heterojunction	heterojunction	NOUN
iajs-820	89	23	for	for	ADP
iajs-820	89	24	different	different	ADJ
iajs-820	89	25	annealing	anneal	VERB
iajs-820	89	26	temperatures	temperature	NOUN
iajs-820	89	27	fig.(4	fig.(4	PROPN
iajs-820	89	28	):	):	PUNCT
iajs-820	89	29	the	the	DET
iajs-820	89	30	variation	variation	NOUN
iajs-820	89	31	of	of	ADP
iajs-820	89	32	1	1	NUM
iajs-820	89	33	/	/	SYM
iajs-820	89	34	c2	c2	PROPN
iajs-820	89	35	versus	versus	ADP
iajs-820	89	36	reverses	reverse	VERB
iajs-820	89	37	bias	bias	NOUN
iajs-820	89	38	voltage	voltage	NOUN
iajs-820	89	39	for	for	ADP
iajs-820	89	40	a	a	DET
iajs-820	89	41	-	-	PUNCT
iajs-820	89	42	ge	ge	NOUN
iajs-820	89	43	:	:	PUNCT
iajs-820	89	44	sb	sb	PROPN
iajs-820	89	45	/	/	SYM
iajs-820	89	46	csi	csi	PROPN
iajs-820	89	47	heterojunction	heterojunction	NOUN
iajs-820	89	48	at	at	ADP
iajs-820	89	49	different	different	ADJ
iajs-820	89	50	annealing	anneal	VERB
iajs-820	89	51	temperatures	temperature	NOUN
iajs-820	89	52	2011	2011	NUM
iajs-820	89	53	)	)	PUNCT
iajs-820	89	54	1	1	NUM
iajs-820	89	55	(	(	PUNCT
iajs-820	89	56	24المجلد	24المجلد	NUM
iajs-820	89	57	مجلة	مجلة	VERB
iajs-820	89	58	ابن	ابن	PROPN
iajs-820	89	59	الهیثم	الهیثم	PROPN
iajs-820	89	60	للعلوم	للعلوم	PROPN
iajs-820	89	61	الصرفة	الصرفة	PROPN
iajs-820	89	62	والتطبیقیة	والتطبیقیة	PROPN
iajs-820	89	63	الهجیني	الهجیني	PROPN
iajs-820	89	64	على	على	PROPN
iajs-820	89	65	التلدین	التلدین	PROPN
iajs-820	89	66	للمفرق	للمفرق	PROPN
iajs-820	89	67	التركیبیة	التركیبیة	NOUN
iajs-820	89	68	والكهربائیة	والكهربائیة	PROPN
iajs-820	89	69	الخواصاعتماد	الخواصاعتماد	PROPN
iajs-820	89	70	a	a	PROPN
iajs-820	89	71	-	-	INTJ
iajs-820	89	72	ge	ge	NOUN
iajs-820	89	73	:	:	PUNCT
iajs-820	89	74	sb	sb	PROPN
iajs-820	89	75	/	/	SYM
iajs-820	89	76	c	c	AUX
iajs-820	89	77	-	-	PUNCT
iajs-820	89	78	si	si	ADJ
iajs-820	89	79	محمد	محمد	PROPN
iajs-820	89	80	حامد	حامد	PROPN
iajs-820	89	81	مصطفى	مصطفى	NOUN
iajs-820	89	82	،	،	X
iajs-820	89	83	*	*	PUNCT
iajs-820	89	84	حسین	حسین	ADJ
iajs-820	89	85	خزعل	خزعل	PROPN
iajs-820	89	86	الالمي	الالمي	NOUN
iajs-820	89	87	.	.	PUNCT
iajs-820	90	1	د	د	PRON
iajs-820	90	2	،	،	ADJ
iajs-820	90	3	علیة	علیة	NOUN
iajs-820	90	4	عبدالمحسن	عبدالمحسن	PROPN
iajs-820	90	5	شهاب	شهاب	PROPN
iajs-820	90	6	جامعة	جامعة	PROPN
iajs-820	90	7	بغداد،كلیة	بغداد،كلیة	PUNCT
iajs-820	90	8	التربیة	التربیة	NOUN
iajs-820	90	9	ابن	ابن	PROPN
iajs-820	90	10	الهیثم،قسم	الهیثم،قسم	PROPN
iajs-820	90	11	الفیزیاء	الفیزیاء	PROPN
iajs-820	90	12	جامعة	جامعة	PROPN
iajs-820	90	13	بغداد،كلیةالعلوم،قسم	بغداد،كلیةالعلوم،قسم	NOUN
iajs-820	90	14	الفیزیاء	الفیزیاء	PROPN
iajs-820	90	15	*	*	PUNCT
iajs-820	90	16	2010حزیران	2010حزیران	NUM
iajs-820	90	17	9استلم	9استلم	NUM
iajs-820	90	18	البحث	البحث	NOUN
iajs-820	90	19	في	في	ADP
iajs-820	90	20	2010حزیران	2010حزیران	NUM
iajs-820	90	21	30قبل	30قبل	NOUN
iajs-820	90	22	البحث	البحث	NOUN
iajs-820	90	23	في	في	ADP
iajs-820	90	24	الخالصة	الخالصة	PROPN
iajs-820	90	25	ــأثیر	ــأثیر	PROPN
iajs-820	90	26	التلـــدین	التلـــدین	PROPN
iajs-820	90	27	فـــي	فـــي	PROPN
iajs-820	90	28	هـــذا	هـــذا	NOUN
iajs-820	90	29	ـة	ـة	AUX
iajs-820	90	30	الغشـــیة	الغشـــیة	VERB
iajs-820	90	31	فـــي	فـــي	PROPN
iajs-820	90	32	البحـــث	البحـــث	PROPN
iajs-820	90	33	دراس	دراس	PROPN
iajs-820	90	34	تـ	تـ	PROPN
iajs-820	91	1	ة	ة	DET
iajs-820	91	2	a	a	DET
iajs-820	91	3	-	-	PUNCT
iajs-820	91	4	geالخـــواص	geالخـــواص	NOUN
iajs-820	91	5	التركیبیــ	التركیبیــ	PROPN
iajs-820	91	6	والخـــواص	والخـــواص	PROPN
iajs-820	91	7	sbب	sbب	NOUN
iajs-820	91	8	المطعمـــ	المطعمـــ	NOUN
iajs-820	91	9	ة	ة	ADP
iajs-820	91	10	للمفـــرق	للمفـــرق	ADJ
iajs-820	91	11	بطریقـــة	بطریقـــة	PROPN
iajs-820	91	12	التبخیـــر	التبخیـــر	PROPN
iajs-820	91	13	الحـــراري	الحـــراري	PROPN
iajs-820	91	14	علـــى	علـــى	PROPN
iajs-820	91	15	a	a	PROPN
iajs-820	91	16	-	-	INTJ
iajs-820	91	17	ge	ge	NOUN
iajs-820	91	18	:	:	PUNCT
iajs-820	91	19	sbالنـــاتج	sbالنـــاتج	NOUN
iajs-820	91	20	مـــن	مـــن	PROPN
iajs-820	91	21	ترســـیب	ترســـیب	PROPN
iajs-820	91	22	a	a	PROPN
iajs-820	91	23	-	-	INTJ
iajs-820	91	24	ge	ge	NOUN
iajs-820	91	25	:	:	PUNCT
iajs-820	91	26	sb	sb	PROPN
iajs-820	91	27	/	/	SYM
iajs-820	91	28	c	c	NOUN
iajs-820	91	29	-	-	PUNCT
iajs-820	91	30	siألهجینـــي	siألهجینـــي	ADJ
iajs-820	91	31	الكهربائیــ	الكهربائیــ	NOUN
iajs-820	91	32	ة	ة	PROPN
iajs-820	91	33	الظـالم	الظـالم	PROPN
iajs-820	92	1	وبـدرجات	وبـدرجات	NOUN
iajs-820	92	2	تلـدین	تلـدین	PROPN
iajs-820	92	3	مختلفــة	مختلفــة	NOUN
iajs-820	92	4	–	–	PUNCT
iajs-820	92	5	تتضـمن	تتضـمن	X
iajs-820	92	6	خصـائص	خصـائص	VERB
iajs-820	92	7	التیـارالخـواص	التیـارالخـواص	ADV
iajs-820	92	8	الكهربائیـة	الكهربائیـة	ADJ
iajs-820	92	9	للمفـرق	للمفـرق	ADJ
iajs-820	92	10	الهجینـي	الهجینـي	NOUN
iajs-820	92	11	.السـلیكون	.السـلیكون	ADP
iajs-820	92	12	فولتیـة	فولتیـة	VERB
iajs-820	92	13	فـي	فـي	NOUN
iajs-820	92	14	حالـ	حالـ	NOUN
iajs-820	92	15	فولتیة	فولتیة	PROPN
iajs-820	92	16	تبین	تبین	VERB
iajs-820	92	17	ان	ان	ADV
iajs-820	92	18	المفـرق	المفـرق	PROPN
iajs-820	92	19	الهجینـي	الهجینـي	PROPN
iajs-820	92	20	كـان	كـان	PROPN
iajs-820	92	21	مـن	مـن	PROPN
iajs-820	92	22	النـوع	النـوع	PROPN
iajs-820	92	23	المنحـدر	المنحـدر	PROPN
iajs-820	92	24	وان	وان	PROPN
iajs-820	92	25	جهـد	جهـد	NOUN
iajs-820	92	26	–	–	PUNCT
iajs-820	92	27	سعة	سعة	NUM
iajs-820	92	28	ومن	ومن	VERB
iajs-820	92	29	خصائص	خصائص	ADV
iajs-820	92	30	.فولتیة	.فولتیة	NOUN
iajs-820	92	31	–	–	PUNCT
iajs-820	92	32	وخصائص	وخصائص	ADJ
iajs-820	92	33	سعة	سعة	PROPN
iajs-820	92	34	درجــات	درجــات	PROPN
iajs-820	92	35	یــزداد	یــزداد	PROPN
iajs-820	92	36	بزیـادة	بزیـادة	NOUN
iajs-820	92	37	الفولتیـة	الفولتیـة	PROPN
iajs-820	92	38	ومقلــوب	ومقلــوب	PROPN
iajs-820	92	39	مربـع	مربـع	PROPN
iajs-820	92	40	الســعة	الســعة	PROPN
iajs-820	92	41	وتبـین	وتبـین	VERB
iajs-820	92	42	ان	ان	ADP
iajs-820	92	43	جهــد	جهــد	ADJ
iajs-820	92	44	البنـاء	البنـاء	ADJ
iajs-820	92	45	للمفــرق	للمفــرق	PROPN
iajs-820	92	46	الهجینـي	الهجینـي	PROPN
iajs-820	92	47	البنـاء	البنـاء	PROPN
iajs-820	92	48	تـم	تـم	PROPN
iajs-820	92	49	تحدیــده	تحدیــده	PROPN
iajs-820	92	50	مـن	مـن	PROPN
iajs-820	92	51	منحنــي	منحنــي	PROPN
iajs-820	92	52	.حرارة	.حرارة	INTJ
iajs-820	92	53	التلدین	التلدین	PROPN